IXFB170N30P

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Mfr.Part #
IXFB170N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 170A PLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Rise Time :
29 ns
Mount :
Through Hole
FET Feature :
--
Rds On (Max) @ Id, Vgs :
18m Ω @ 85A, 10V
Continuous Drain Current (ID) :
170A
Gate Charge (Qg) (Max) @ Vgs :
258nC @ 10V
Drain-source On Resistance-Max :
0.018Ohm
Package :
Tube
Power Dissipation (Max) :
1250W (Tc)
Case Connection :
DRAIN
JESD-30 Code :
R-PSIP-T3
DS Breakdown Voltage-Min :
300V
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
ECCN Code :
EAR99
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
1250 W
Lead Free :
Lead Free
FET Type :
N-Channel
Width :
5.31 mm
Factory Lead Time :
26 Weeks
Number of Elements :
1
Terminal Position :
Single
Mounting Type :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Published :
2008
Series :
HiPerFET™, PolarP2™
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Power Dissipation :
1.25 kW
Tradename :
HiPerFET
Number of Channels :
1 Channel
Pin Count :
3
Height :
26.59 mm
Product Category :
MOSFET
Type :
Polar Power MOSFET HiPerFET
Drain Current-Max (Abs) (ID) :
170 A
Base Product Number :
IXFB170
Surface Mount :
No
RoHS :
Compliant
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 25V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Pbfree Code :
yes
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Pulsed Drain Current-Max (IDM) :
500A
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Compliant
Qualification Status :
Not Qualified
Length :
20.29 mm
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Avalanche Energy Rating (Eas) :
5000 mJ
Mounting Style :
Through Hole
Channel Mode :
Enhancement
Product Status :
Active
Power Dissipation-Max :
1250W Tc
Transistor Element Material :
SILICON
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Transistor Polarity :
N-Channel
Rds On Max :
18 mΩ
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Operating Mode :
ENHANCEMENT MODE
Drain to Source Voltage (Vdss) :
300V
Polarity/Channel Type :
N-Channel
Product Type :
MOSFET
Supplier Device Package :
PLUS264™
Number of Terminals :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance :
20 nF
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e1
Datasheets
IXFB170N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB170N30P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Type:Polar Power MOSFET HiPerFET, Operating Temperature:-55°C~150°C TJ, IXFB170N30P pinout, IXFB170N30P datasheet PDF, IXFB170N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB170N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB170N30P


N-Channel Tube 18m Ω @ 85A, 10V ±20V 20000pF @ 25V 258nC @ 10V 300V TO-264-3, TO-264AA

IXFB170N30P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 20000pF @ 25V.This device has a continuous drain current (ID) of [170A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 170 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB170N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 500A.
a 300V drain to source voltage (Vdss)


IXFB170N30P Applications


There are a lot of IXYS
IXFB170N30P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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