IXFB170N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

IXYS

Number of Terminals :

3

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Max Power Dissipation :

1.25 kW

Pulsed Drain Current-Max (IDM) :

500A

Case Connection :

DRAIN

Factory Lead Time :

26 Weeks

Surface Mount :

No

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Package Shape :

RECTANGULAR

Length :

20.29 mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

18m Ω @ 85A, 10V

Input Capacitance :

20 nF

Terminal Form :

THROUGH-HOLE

JESD-609 Code :

e1

Supplier Device Package :

PLUS264™

Transistor Element Material :

SILICON

Width :

5.31 mm

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max :

1250W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Packaging :

Tube

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

RoHS :

Compliant

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Number of Channels :

1 Channel

Power Dissipation (Max) :

1250W (Tc)

Type :

Polar Power MOSFET HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

170 A

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Feature :

--

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

170A

Published :

2008

Drain to Source Voltage (Vdss) :

300V

Package / Case :

TO-264-3, TO-264AA

FET Type :

N-Channel

Rds On Max :

18 mΩ

ECCN Code :

EAR99

Height :

26.59 mm

Polarity/Channel Type :

N-Channel

Avalanche Energy Rating (Eas) :

5000 mJ

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

1250 W

DS Breakdown Voltage-Min :

300V

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.018Ohm

Product Type :

MOSFET

Number of Elements :

1

Pbfree Code :

yes

Base Product Number :

IXFB170

Series :

HiPerFET™, PolarP2™

Number of Terminations :

3

Reach Compliance Code :

Compliant

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Rise Time :

29 ns

Qualification Status :

Not Qualified

Maximum Operating Temperature :

+ 150 C

Mount :

Through Hole

Lead Free :

Lead Free