IXFB170N30P

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Mfr.Part #
IXFB170N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 170A PLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™, PolarP2™
JESD-30 Code :
R-PSIP-T3
Avalanche Energy Rating (Eas) :
5000 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 25V
Minimum Operating Temperature :
- 55 C
Tradename :
HiPerFET
Vgs (Max) :
±20V
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
Through Hole
Supplier Device Package :
PLUS264™
Pin Count :
3
Pulsed Drain Current-Max (IDM) :
500A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Power Dissipation-Max (Abs) :
1250 W
Packaging :
Tube
Package Shape :
RECTANGULAR
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Pbfree Code :
yes
FET Feature :
--
RoHS :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On Max :
18 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
26 Weeks
Rds On (Max) @ Id, Vgs :
18m Ω @ 85A, 10V
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Number of Terminals :
3
Case Connection :
DRAIN
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Additional Feature :
AVALANCHE RATED
Polarity/Channel Type :
N-Channel
Power Dissipation-Max :
1250W Tc
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
170 A
Maximum Operating Temperature :
+ 150 C
Gate Charge (Qg) (Max) @ Vgs :
258nC @ 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
FET Type :
N-Channel
Package / Case :
TO-264-3, TO-264AA
Package :
Tube
Drain-source On Resistance-Max :
0.018Ohm
Terminal Position :
Single
Number of Channels :
1 Channel
Product Category :
MOSFET
Channel Mode :
Enhancement
Published :
2008
Type :
Polar Power MOSFET HiPerFET
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Power Dissipation (Max) :
1250W (Tc)
Rise Time :
29 ns
Terminal Form :
THROUGH-HOLE
Qualification Status :
Not Qualified
Manufacturer :
IXYS
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Brand :
IXYS
Drain to Source Voltage (Vdss) :
300V
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
170A
Reach Compliance Code :
Compliant
JESD-609 Code :
e1
Max Power Dissipation :
1.25 kW
Input Capacitance :
20 nF
Height :
26.59 mm
Width :
5.31 mm
Base Product Number :
IXFB170
DS Breakdown Voltage-Min :
300V
Length :
20.29 mm
ECCN Code :
EAR99
Product Type :
MOSFET
Number of Terminations :
3
Datasheets
IXFB170N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB170N30P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Channels:1 Channel, Type:Polar Power MOSFET HiPerFET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFB170N30P pinout, IXFB170N30P datasheet PDF, IXFB170N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB170N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB170N30P


N-Channel Tube 18m Ω @ 85A, 10V ±20V 20000pF @ 25V 258nC @ 10V 300V TO-264-3, TO-264AA

IXFB170N30P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 20000pF @ 25V.This device has a continuous drain current (ID) of [170A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 170 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB170N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 500A.
a 300V drain to source voltage (Vdss)


IXFB170N30P Applications


There are a lot of IXYS
IXFB170N30P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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