IXFB170N30P

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Mfr.Part #
IXFB170N30P
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 300V 170A PLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
5000 mJ
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Tradename :
HiPerFET
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
170A Tc
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
258nC @ 10V
Width :
5.31 mm
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
18m Ω @ 85A, 10V
Product Category :
MOSFET
Minimum Operating Temperature :
- 55 C
RoHS :
Compliant
JESD-30 Code :
R-PSIP-T3
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Height :
26.59 mm
Power Dissipation-Max :
1250W Tc
Power Dissipation-Max (Abs) :
1250 W
Reach Compliance Code :
Compliant
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Drain to Source Voltage (Vdss) :
300V
Factory Lead Time :
26 Weeks
Power Dissipation (Max) :
1250W (Tc)
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Manufacturer :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
500A
Product Type :
MOSFET
Length :
20.29 mm
Mount :
Through Hole
Vgs (Max) :
±20V
Rise Time :
29 ns
JESD-609 Code :
e1
Surface Mount :
No
Lead Free :
Lead Free
Base Product Number :
IXFB170
Additional Feature :
AVALANCHE RATED
Drain Current-Max (Abs) (ID) :
170 A
Input Capacitance :
20 nF
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Series :
HiPerFET™, PolarP2™
DS Breakdown Voltage-Min :
300V
Vgs(th) (Max) @ Id :
4.5V @ 1mA
FET Feature :
--
Drain-source On Resistance-Max :
0.018Ohm
Number of Channels :
1 Channel
Supplier Device Package :
PLUS264™
Mounting Style :
Through Hole
Transistor Application :
SWITCHING
Package :
Tube
Pin Count :
3
Type :
Polar Power MOSFET HiPerFET
ECCN Code :
EAR99
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Rds On Max :
18 mΩ
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-264-3, TO-264AA
Input Capacitance (Ciss) (Max) @ Vds :
20000pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Published :
2008
Number of Terminations :
3
Packaging :
Tube
Max Power Dissipation :
1.25 kW
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
170A
Datasheets
IXFB170N30P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB170N30P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Type:Polar Power MOSFET HiPerFET, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFB170N30P pinout, IXFB170N30P datasheet PDF, IXFB170N30P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB170N30P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB170N30P


N-Channel Tube 18m Ω @ 85A, 10V ±20V 20000pF @ 25V 258nC @ 10V 300V TO-264-3, TO-264AA

IXFB170N30P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 20000pF @ 25V.This device has a continuous drain current (ID) of [170A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 170 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB170N30P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 500A.
a 300V drain to source voltage (Vdss)


IXFB170N30P Applications


There are a lot of IXYS
IXFB170N30P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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