IXFB170N30P
- Mfr.Part #
- IXFB170N30P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 170A PLUS264
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HiPerFET™, PolarP2™
- JESD-30 Code :
- R-PSIP-T3
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 20000pF @ 25V
- Minimum Operating Temperature :
- - 55 C
- Tradename :
- HiPerFET
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Through Hole
- Supplier Device Package :
- PLUS264™
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 500A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Power Dissipation-Max (Abs) :
- 1250 W
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- FET Feature :
- --
- RoHS :
- Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 18 mΩ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 26 Weeks
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 85A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 170A Tc
- Number of Terminals :
- 3
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Additional Feature :
- AVALANCHE RATED
- Polarity/Channel Type :
- N-Channel
- Power Dissipation-Max :
- 1250W Tc
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 170 A
- Maximum Operating Temperature :
- + 150 C
- Gate Charge (Qg) (Max) @ Vgs :
- 258nC @ 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Type :
- N-Channel
- Package / Case :
- TO-264-3, TO-264AA
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.018Ohm
- Terminal Position :
- Single
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Published :
- 2008
- Type :
- Polar Power MOSFET HiPerFET
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 1250W (Tc)
- Rise Time :
- 29 ns
- Terminal Form :
- THROUGH-HOLE
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Brand :
- IXYS
- Drain to Source Voltage (Vdss) :
- 300V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 170A
- Reach Compliance Code :
- Compliant
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 1.25 kW
- Input Capacitance :
- 20 nF
- Height :
- 26.59 mm
- Width :
- 5.31 mm
- Base Product Number :
- IXFB170
- DS Breakdown Voltage-Min :
- 300V
- Length :
- 20.29 mm
- ECCN Code :
- EAR99
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Datasheets
- IXFB170N30P

N-Channel Tube 18m Ω @ 85A, 10V ±20V 20000pF @ 25V 258nC @ 10V 300V TO-264-3, TO-264AA
IXFB170N30P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 5000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 20000pF @ 25V.This device has a continuous drain current (ID) of [170A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 170 A.A maximum pulsed drain current of 500A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 300V.In order to operate this transistor, a voltage of 300V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFB170N30P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 170A
based on its rated peak drain current 500A.
a 300V drain to source voltage (Vdss)
IXFB170N30P Applications
There are a lot of IXYS
IXFB170N30P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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