IXFB170N30P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Transistor Element Material :

SILICON

Rise Time :

29 ns

Lead Free :

Lead Free

Mount :

Through Hole

FET Type :

N-Channel

Continuous Drain Current (ID) :

170A

FET Feature :

--

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

300V

Minimum Operating Temperature :

- 55 C

JESD-609 Code :

e1

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

500A

Gate Charge (Qg) (Max) @ Vgs :

258nC @ 10V

Width :

5.31 mm

Terminal Position :

Single

Pbfree Code :

yes

Type :

Polar Power MOSFET HiPerFET

Channel Mode :

Enhancement

Max Power Dissipation :

1.25 kW

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

20.29 mm

Product Type :

MOSFET

Input Capacitance :

20 nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS :

Compliant

Surface Mount :

No

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

0.018Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

1250 W

Avalanche Energy Rating (Eas) :

5000 mJ

Package / Case :

TO-264-3, TO-264AA

Pin Count :

3

Supplier Device Package :

PLUS264™

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

170 A

Power Dissipation-Max :

1250W Tc

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Product Category :

MOSFET

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks

Number of Terminations :

3

Power Dissipation (Max) :

1250W (Tc)

Transistor Application :

SWITCHING

Reach Compliance Code :

Compliant

Published :

2008

Rds On Max :

18 mΩ

Tradename :

HiPerFET

Brand :

IXYS

JESD-30 Code :

R-PSIP-T3

Series :

HiPerFET™, PolarP2™

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Height :

26.59 mm

Rds On (Max) @ Id, Vgs :

18m Ω @ 85A, 10V

Mounting Style :

Through Hole

Product Status :

Active

Qualification Status :

Not Qualified

Base Product Number :

IXFB170

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

300V

Package :

Tube