IXFB40N110P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supplier Device Package :

PLUS264™

JESD-30 Code :

R-PSIP-T3

Number of Terminals :

3

Factory Lead Time :

26 Weeks

Product Category :

MOSFET

Tradename :

HiPerFET

Length :

20.29 mm

Power Dissipation-Max (Abs) :

1250 W

Drain-source On Resistance-Max :

0.26Ohm

Product Status :

Active

Mounting Type :

Through Hole

Series :

HiPerFET™, PolarP2™

Qualification Status :

Not Qualified

Terminal Position :

Single

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Power Dissipation :

1.25kW

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Brand :

IXYS

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2000 mJ

Package / Case :

TO-264-3, TO-264AA

Height :

26.59 mm

Mounting Style :

Through Hole

Terminal Form :

THROUGH-HOLE

Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2008

Number of Channels :

1 Channel

Product Type :

MOSFET

Fall Time (Typ) :

54 ns

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Manufacturer :

IXYS

Surface Mount :

No

Package Shape :

RECTANGULAR

Channel Mode :

Enhancement

Drain to Source Breakdown Voltage :

1.1kV

Continuous Drain Current (ID) :

40A

FET Type :

N-Channel

Turn-Off Delay Time :

110 ns

RoHS Status :

ROHS3 Compliant

Width :

5.31 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation (Max) :

1250W (Tc)

JESD-609 Code :

e1

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

100A

Case Connection :

DRAIN

Packaging :

Tube

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Transistor Type :

1 N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single

Vgs (Max) :

±30V

Number of Elements :

1

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Drain Current-Max (Abs) (ID) :

40 A

Operating Mode :

ENHANCEMENT MODE

Package :

Tube

Rise Time :

55ns

Mount :

Through Hole

Transistor Polarity :

N-Channel

Power Dissipation-Max :

1250W Tc

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

1100V

Pin Count :

3

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

260m Ω @ 20A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Base Product Number :

IXFB40

DS Breakdown Voltage-Min :

1100 V