IXFB82N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1250W Tc

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Max Operating Temperature :

150 °C

Height :

26.59 mm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

600V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.075Ohm

Number of Channels :

1 Channel

Min Operating Temperature :

-55 °C

Factory Lead Time :

26 Weeks

RoHS :

Details

Package Shape :

RECTANGULAR

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

FET Feature :

--

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Type :

PolarHV HiPerFET Power MOSFET

Series :

HiPerFET™, PolarHT™

FET Type :

N-Channel

Power Dissipation (Max) :

1250W (Tc)

Product Type :

MOSFET

Vgs (Max) :

±30V

Rds On Max :

75 mΩ

Mount :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Status :

Active

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

Case Connection :

DRAIN

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Package / Case :

TO-264-3, TO-264AA

Pulsed Drain Current-Max (IDM) :

200A

Brand :

IXYS

Vgs(th) (Max) @ Id :

5V @ 8mA

Maximum Operating Temperature :

+ 150 C

Surface Mount :

No

Lead Free :

Lead Free

Packaging :

Tube

Fall Time (Typ) :

24 ns

Input Capacitance :

23 nF

Mounting Style :

Through Hole

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSIP-T3

Package :

Tube

Length :

20.29 mm

Number of Terminals :

3

Base Product Number :

IXFB82

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Element Configuration :

Single

Rise Time :

23ns

Width :

5.31 mm

Configuration :

Single

Rds On (Max) @ Id, Vgs :

75m Ω @ 41A, 10V

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

82A

Reach Compliance Code :

Compliant

Drain to Source Resistance :

750 mΩ

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

1.25 kW

Power Dissipation :

1.25kW

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

600 V

Tradename :

HiPerFET

Drain to Source Breakdown Voltage :

600V

Published :

2006

Transistor Type :

1 N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

PLUS264™

Product Category :

MOSFET

Turn-Off Delay Time :

79 ns

Subcategory :

MOSFETs

Avalanche Energy Rating (Eas) :

5000 mJ

Number of Terminations :

3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

82A Tc