IXFB80N50Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

20.29 mm

Vgs (Max) :

±30V

Power Dissipation (Max) :

960W (Tc)

Series :

HiPerFET™

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

60 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain to Source Resistance :

60 mΩ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Operating Temperature :

150 °C

Rds On Max :

60 mΩ

FET Type :

N-Channel

DS Breakdown Voltage-Min :

500 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Product Number :

IXFB80

Element Configuration :

Single

Transistor Element Material :

SILICON

Transistor Type :

1 N-Channel

Maximum Operating Temperature :

+ 150 C

Pin Count :

3

Product Category :

MOSFET

Continuous Drain Current (ID) :

80A

Transistor Application :

SWITCHING

Product Status :

Not For New Designs

Mounting Style :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

Published :

2007

Input Capacitance :

15 nF

Drain to Source Voltage (Vdss) :

500V

Package / Case :

TO-264-3, TO-264AA

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Lead Free :

Lead Free

Mount :

Through Hole

Height :

26.59 mm

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

320 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

960W Tc

Package :

Tube

Drain-source On Resistance-Max :

0.06 Ω

Drain Current-Max (Abs) (ID) :

80 A

Avalanche Energy Rating (Eas) :

5000 mJ

Fall Time (Typ) :

11 ns

Brand :

IXYS

Case Connection :

DRAIN

Package Shape :

RECTANGULAR

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Min Operating Temperature :

-55 °C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 25V

Number of Pins :

3

Terminal Form :

THROUGH-HOLE

Tradename :

HyperFET

Power Dissipation :

960W

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Supplier Device Package :

PLUS264™

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Surface Mount :

No

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

JEDEC-95 Code :

TO-264AA

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

60m Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

500V

Rise Time :

25ns

Radiation Hardening :

No

Mounting Type :

Through Hole

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Resistance :

60mOhm

FET Feature :

--

Max Power Dissipation :

960 W

Factory Lead Time :

8 Weeks

Number of Channels :

1 Channel

Width :

5.31 mm

Power Dissipation-Max (Abs) :

960 W

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e1