IXFB80N50Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

HyperFET

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Height :

26.59 mm

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminals :

3

Drain to Source Voltage (Vdss) :

500V

Number of Pins :

3

Power Dissipation-Max (Abs) :

960 W

Number of Channels :

1 Channel

Mount :

Through Hole

Maximum Operating Temperature :

+ 150 C

Transistor Application :

SWITCHING

Number of Elements :

1

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Input Capacitance :

15 nF

Pulsed Drain Current-Max (IDM) :

320 A

Lead Free :

Lead Free

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Length :

20.29 mm

Power Dissipation-Max :

960W Tc

Packaging :

Tube

Supplier Device Package :

PLUS264™

Power Dissipation :

960W

Rds On (Max) @ Id, Vgs :

60m Ω @ 500mA, 10V

Product Type :

MOSFET

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

5000 mJ

Package / Case :

TO-264-3, TO-264AA

Manufacturer :

IXYS

Minimum Operating Temperature :

- 55 C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Channel Mode :

Enhancement

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.06 Ω

Package :

Tube

Package Shape :

RECTANGULAR

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Drain to Source Resistance :

60 mΩ

Series :

HiPerFET™

Qualification Status :

Not Qualified

Published :

2007

Power Dissipation (Max) :

960W (Tc)

JEDEC-95 Code :

TO-264AA

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

11 ns

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

15000pF @ 25V

Surface Mount :

No

Mounting Type :

Through Hole

FET Type :

N-Channel

JESD-609 Code :

e1

Product Status :

Not For New Designs

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

FET Feature :

--

Polarity/Channel Type :

N-Channel

Configuration :

Single

Base Product Number :

IXFB80

Transistor Element Material :

SILICON

Mounting Style :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

60mOhm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

80A

JESD-30 Code :

R-PSFM-T3

Turn-Off Delay Time :

60 ns

RoHS :

Details

Reach Compliance Code :

Compliant

Width :

5.31 mm

DS Breakdown Voltage-Min :

500 V

Product Category :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

80 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

960 W

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

Max Operating Temperature :

150 °C

Drain to Source Breakdown Voltage :

500V

Rise Time :

25ns

Rds On Max :

60 mΩ

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Factory Lead Time :

8 Weeks