IXFB72N55Q2

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Mfr.Part #
IXFB72N55Q2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 550V 72A PLUS264
Stock
21,193
In Stock :
21,193

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Channels :
1 Channel
Power Dissipation :
890W
JESD-30 Code :
R-PSIP-T3
Brand :
IXYS
Power Dissipation-Max :
890W Tc
FET Type :
N-Channel
Pbfree Code :
yes
Configuration :
Single
Additional Feature :
AVALANCHE RATED
Number of Terminations :
3
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
5000 mJ
Height :
21.34 mm
Tradename :
HyperFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Operating Mode :
ENHANCEMENT MODE
Channel Mode :
Enhancement
Mounting Style :
Through Hole
Package Shape :
RECTANGULAR
FET Feature :
--
Number of Elements :
1
Reach Compliance Code :
Compliant
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs(th) (Max) @ Id :
5V @ 8mA
Mounting Type :
Through Hole
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
258nC @ 10V
Package :
Tube
Element Configuration :
Single
Surface Mount :
No
Fall Time (Typ) :
10 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.072Ohm
Transistor Element Material :
SILICON
Width :
5.21 mm
Rds On (Max) @ Id, Vgs :
72m Ω @ 500mA, 10V
Turn-Off Delay Time :
58 ns
Maximum Operating Temperature :
+ 150 C
DS Breakdown Voltage-Min :
550 V
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Published :
2003
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Product Status :
Active
Product Category :
MOSFET
Mount :
Through Hole
Rise Time :
23ns
Drain to Source Voltage (Vdss) :
550V
Length :
16.13 mm
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
PLUS264™
Packaging :
Tube
Series :
HiPerFET™
Vgs (Max) :
±30V
Transistor Polarity :
N-Channel
RoHS :
Details
Product Type :
MOSFET
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
10500pF @ 25V
Gate to Source Voltage (Vgs) :
30V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
72A
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Subcategory :
MOSFETs
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
284A
Drain to Source Breakdown Voltage :
550V
Manufacturer :
IXYS
Package / Case :
TO-264-3, TO-264AA
Base Product Number :
IXFB72
Power Dissipation (Max) :
890W (Tc)
Datasheets
IXFB72N55Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFB72N55Q2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, IXFB72N55Q2 pinout, IXFB72N55Q2 datasheet PDF, IXFB72N55Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFB72N55Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFB72N55Q2


N-Channel Tube 72m Ω @ 500mA, 10V ±30V 10500pF @ 25V 258nC @ 10V 550V TO-264-3, TO-264AA

IXFB72N55Q2 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 5000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10500pF @ 25V.This device conducts a continuous drain current (ID) of 72A, which is the maximum continuous current transistor can conduct.Using VGS=550V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 550V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 284A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 550 V.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFB72N55Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 284A.
a 550V drain to source voltage (Vdss)


IXFB72N55Q2 Applications


There are a lot of IXYS
IXFB72N55Q2 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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