IXFB72N55Q2
- Mfr.Part #
- IXFB72N55Q2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 72A PLUS264
- Stock
- 21,193
- In Stock :
- 21,193
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Channels :
- 1 Channel
- Power Dissipation :
- 890W
- JESD-30 Code :
- R-PSIP-T3
- Brand :
- IXYS
- Power Dissipation-Max :
- 890W Tc
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Configuration :
- Single
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Height :
- 21.34 mm
- Tradename :
- HyperFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Package Shape :
- RECTANGULAR
- FET Feature :
- --
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Mounting Type :
- Through Hole
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 258nC @ 10V
- Package :
- Tube
- Element Configuration :
- Single
- Surface Mount :
- No
- Fall Time (Typ) :
- 10 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.072Ohm
- Transistor Element Material :
- SILICON
- Width :
- 5.21 mm
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 500mA, 10V
- Turn-Off Delay Time :
- 58 ns
- Maximum Operating Temperature :
- + 150 C
- DS Breakdown Voltage-Min :
- 550 V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Published :
- 2003
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Terminal Position :
- Single
- Product Status :
- Active
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Rise Time :
- 23ns
- Drain to Source Voltage (Vdss) :
- 550V
- Length :
- 16.13 mm
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- PLUS264™
- Packaging :
- Tube
- Series :
- HiPerFET™
- Vgs (Max) :
- ±30V
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Product Type :
- MOSFET
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 25V
- Gate to Source Voltage (Vgs) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 72A
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Subcategory :
- MOSFETs
- Case Connection :
- DRAIN
- Pulsed Drain Current-Max (IDM) :
- 284A
- Drain to Source Breakdown Voltage :
- 550V
- Manufacturer :
- IXYS
- Package / Case :
- TO-264-3, TO-264AA
- Base Product Number :
- IXFB72
- Power Dissipation (Max) :
- 890W (Tc)
- Datasheets
- IXFB72N55Q2

N-Channel Tube 72m Ω @ 500mA, 10V ±30V 10500pF @ 25V 258nC @ 10V 550V TO-264-3, TO-264AA
IXFB72N55Q2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 5000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10500pF @ 25V.This device conducts a continuous drain current (ID) of 72A, which is the maximum continuous current transistor can conduct.Using VGS=550V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 550V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 58 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 284A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 550 V.This transistor requires a drain-source voltage (Vdss) of 550V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFB72N55Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 284A.
a 550V drain to source voltage (Vdss)
IXFB72N55Q2 Applications
There are a lot of IXYS
IXFB72N55Q2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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