IXFB70N60Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Element Configuration :

Single

Width :

5.31mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

25ns

DS Breakdown Voltage-Min :

600 V

Pin Count :

3

Terminal Position :

Single

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Drain Current-Max (Abs) (ID) :

70 A

Vgs (Max) :

±30V

Mounting Style :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Power Dissipation (Max) :

890W (Tc)

Package Shape :

RECTANGULAR

Mount :

Through Hole

Configuration :

Single

Power Dissipation :

890W

Power Dissipation-Max (Abs) :

890 W

Packaging :

Tube

Brand :

IXYS

Supplier Device Package :

PLUS264™

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

280A

Number of Terminations :

3

Published :

2010

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Factory Lead Time :

8 Weeks

Manufacturer :

IXYS

FET Feature :

--

Transistor Polarity :

N-Channel

Turn-Off Delay Time :

60 ns

Number of Terminals :

3

Height :

26.59mm

Number of Pins :

264

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

890W Tc

Base Product Number :

IXFB70

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

HiPerFET™

Tradename :

HiPerFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

FET Type :

N-Channel

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

5 mJ

Rds On (Max) @ Id, Vgs :

88m Ω @ 35A, 10V

Surface Mount :

No

Product Status :

Not For New Designs

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Turn On Delay Time :

26 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

70A

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5.5V @ 8mA

RoHS :

Details

Length :

20.29mm

JESD-30 Code :

R-PSIP-T3

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 25V

Additional Feature :

AVALANCHE RATED

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

600V

Channel Mode :

Enhancement

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

265nC @ 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.088Ohm

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

12 ns

Terminal Form :

THROUGH-HOLE