IXFB62N80Q3
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- Mfr.Part #
- IXFB62N80Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 62A PLUS264
- Stock
- 19,460
- In Stock ：
- 19,460
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 1.56kW
- Product Status :
- Active
- Supplier Device Package :
- PLUS264™
- Element Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Radiation Hardening :
- No
- Reach Compliance Code :
- Unknown
- Width :
- 5.31mm
- Product Type :
- MOSFET
- FET Type :
- N-Channel
- RoHS :
- Details
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Turn On Delay Time :
- 54 ns
- Tradename :
- HiPerFET
- Drain to Source Breakdown Voltage :
- 800V
- Package / Case :
- TO-264-3, TO-264AA
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Number of Channels :
- 1 Channel
- Length :
- 20.29mm
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 1560W (Tc)
- Turn-Off Delay Time :
- 62 ns
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 62A
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 31A, 10V
- Published :
- 2012
- Product Category :
- MOSFET
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Style :
- Through Hole
- Factory Lead Time :
- 26 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Manufacturer :
- IXYS
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Configuration :
- Single
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Package :
- Tube
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1560W Tc
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 26.59mm
- Base Product Number :
- IXFB62
- JESD-30 Code :
- R-PSIP-T3
- Series :
- HiPerFET™
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Channel Mode :
- Enhancement
- Rise Time :
- 300ns
- Number of Pins :
- 264
- FET Feature :
- --
- Number of Elements :
- 1
- Datasheets
- IXFB62N80Q3
N-Channel Tube 140m Ω @ 31A, 10V ±30V 13600pF @ 25V 270nC @ 10V 800V TO-264-3, TO-264AA
IXFB62N80Q3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 62A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 54 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFB62N80Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
a 800V drain to source voltage (Vdss)
IXFB62N80Q3 Applications
There are a lot of IXYS
IXFB62N80Q3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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