IXFB62N80Q3
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- Mfr.Part #
- IXFB62N80Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 62A PLUS264
- Stock
- 19,460
- In Stock ：
- 19,460
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Supplier Device Package :
- PLUS264™
- Number of Terminations :
- 3
- Transistor Polarity :
- N-Channel
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Packaging :
- Tube
- Number of Pins :
- 264
- Power Dissipation-Max :
- 1560W Tc
- Case Connection :
- DRAIN
- Series :
- HiPerFET™
- Mounting Style :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- - 55 C
- Width :
- 5.31mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Power Dissipation (Max) :
- 1560W (Tc)
- Drain to Source Voltage (Vdss) :
- 800V
- Operating Mode :
- ENHANCEMENT MODE
- Product Type :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 26.59mm
- Channel Mode :
- Enhancement
- Power Dissipation :
- 1.56kW
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Maximum Operating Temperature :
- + 150 C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 54 ns
- Turn-Off Delay Time :
- 62 ns
- Published :
- 2012
- Radiation Hardening :
- No
- Factory Lead Time :
- 26 Weeks
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 31A, 10V
- Pin Count :
- 3
- Product Category :
- MOSFET
- Base Product Number :
- IXFB62
- JESD-30 Code :
- R-PSIP-T3
- Tradename :
- HiPerFET
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Package :
- Tube
- Continuous Drain Current (ID) :
- 62A
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- Product Status :
- Active
- Reach Compliance Code :
- Unknown
- Rise Time :
- 300ns
- Drain to Source Breakdown Voltage :
- 800V
- Element Configuration :
- Single
- Length :
- 20.29mm
- Number of Elements :
- 1
- Datasheets
- IXFB62N80Q3
N-Channel Tube 140m Ω @ 31A, 10V ±30V 13600pF @ 25V 270nC @ 10V 800V TO-264-3, TO-264AA
IXFB62N80Q3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 62A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 54 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFB62N80Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
a 800V drain to source voltage (Vdss)
IXFB62N80Q3 Applications
There are a lot of IXYS
IXFB62N80Q3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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