IXFB62N80Q3
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- Mfr.Part #
- IXFB62N80Q3
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 62A PLUS264
- Stock
- 19,460
- In Stock ：
- 19,460
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 26 Weeks
- Minimum Operating Temperature :
- - 55 C
- Turn On Delay Time :
- 54 ns
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- PLUS264™
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 62A
- Turn-Off Delay Time :
- 62 ns
- Configuration :
- Single
- Series :
- HiPerFET™
- Mounting Style :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- FET Feature :
- --
- Rise Time :
- 300ns
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 800V
- Product Status :
- Active
- Height :
- 26.59mm
- Power Dissipation :
- 1.56kW
- Width :
- 5.31mm
- Drain to Source Breakdown Voltage :
- 800V
- Packaging :
- Tube
- Channel Mode :
- Enhancement
- Vgs(th) (Max) @ Id :
- 6.5V @ 8mA
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Tradename :
- HiPerFET
- Base Product Number :
- IXFB62
- Brand :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 20.29mm
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Published :
- 2012
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 1560W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Number of Elements :
- 1
- Transistor Polarity :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 1560W Tc
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- JESD-30 Code :
- R-PSIP-T3
- Number of Pins :
- 264
- Rds On (Max) @ Id, Vgs :
- 140m Ω @ 31A, 10V
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS
- Datasheets
- IXFB62N80Q3
N-Channel Tube 140m Ω @ 31A, 10V ±30V 13600pF @ 25V 270nC @ 10V 800V TO-264-3, TO-264AA
IXFB62N80Q3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 62A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=800V. And this device has 800V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 54 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 800V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFB62N80Q3 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
a 800V drain to source voltage (Vdss)
IXFB62N80Q3 Applications
There are a lot of IXYS
IXFB62N80Q3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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