IXFB52N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

5.31 mm

Channel Mode :

Enhancement

Manufacturer :

IXYS

Qualification :

-

Threshold Voltage :

3.5V

DS Breakdown Voltage-Min :

900 V

Minimum Operating Temperature :

- 55 C

Series :

HiPerFET™, PolarP2™

Power Dissipation-Max (Abs) :

1250 W

Rise Time :

80ns

Number of Pins :

3

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Length :

20.29 mm

Qualification Status :

Not Qualified

Power Dissipation :

1.25kW

Surface Mount :

No

Continuous Drain Current Id :

52A

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Vgs (Max) :

±30V

Product Status :

Active

FET Type :

N-Channel

Terminal Form :

THROUGH-HOLE

Maximum Operating Temperature :

+ 150 C

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

95 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Compliant

Fall Time (Typ) :

42 ns

Packaging :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

160m Ω @ 26A, 10V

Min Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Base Product Number :

IXFB52

Element Configuration :

Single

Tradename :

HiPerFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Resistance :

160 mΩ

Mounting Style :

Through Hole

Rds On Max :

160 mΩ

Height :

26.59 mm

MSL :

-

Drain to Source Voltage (Vdss) :

900V

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

104A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Input Capacitance :

19 nF

Number of Terminations :

3

Factory Lead Time :

26 Weeks

Drain Current-Max (Abs) (ID) :

52 A

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

Continuous Drain Current (ID) :

52A

Number of Channels :

1 Channel

Product Category :

MOSFET

Number of Terminals :

3

Supplier Device Package :

PLUS264™

Gate Charge (Qg) (Max) @ Vgs :

308nC @ 10V

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Power Dissipation-Max :

1250W Tc

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

900V

JESD-609 Code :

e1

Configuration :

Single

Package :

Tube

Avalanche Energy Rating (Eas) :

2000 mJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

TO-264-3, TO-264AA

Product Type :

MOSFET

FET Feature :

-

Published :

2009

Power Dissipation (Max) :

1250W (Tc)

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Power Dissipation :

1.25 kW

Transistor Type :

1 N-Channel

Gate to Source Voltage (Vgs) :

30V

Drain-source On Resistance-Max :

0.16Ohm

RoHS :

Details

Channel Type :

N Channel

Transistor Element Material :

SILICON

Pin Count :

3

Max Operating Temperature :

150 °C

Terminal Position :

Single

Nominal Vgs :

3.5 V

Transistor Polarity :

N-Channel