IXFB52N90P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

95 ns

Max Power Dissipation :

1.25 kW

Continuous Drain Current Id :

52A

Min Operating Temperature :

-55 °C

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

308nC @ 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Tube

Tradename :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

160 mΩ

Product Status :

Active

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

160m Ω @ 26A, 10V

Continuous Drain Current (ID) :

52A

Power Dissipation :

1.25kW

Drain to Source Resistance :

160 mΩ

Transistor Type :

1 N-Channel

Terminal Form :

THROUGH-HOLE

Nominal Vgs :

3.5 V

Factory Lead Time :

26 Weeks

RoHS :

Details

Rise Time :

80ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Length :

20.29 mm

MSL :

-

Qualification :

-

Channel Mode :

Enhancement

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Manufacturer :

IXYS

Mounting Style :

Through Hole

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e1

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Transistor Polarity :

N-Channel

Mounting Type :

Through Hole

Channel Type :

N Channel

Threshold Voltage :

3.5V

Transistor Application :

SWITCHING

Power Dissipation-Max :

1250W Tc

Number of Elements :

1

Number of Terminals :

3

Fall Time (Typ) :

42 ns

Series :

HiPerFET™, PolarP2™

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

900V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Configuration :

Single

Product Type :

MOSFET

Gate to Source Voltage (Vgs) :

30V

Height :

26.59 mm

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

104A

Avalanche Energy Rating (Eas) :

2000 mJ

Base Product Number :

IXFB52

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Input Capacitance :

19 nF

Pbfree Code :

yes

Width :

5.31 mm

FET Feature :

-

Case Connection :

DRAIN

Terminal Position :

Single

Element Configuration :

Single

DS Breakdown Voltage-Min :

900 V

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

52 A

Power Dissipation (Max) :

1250W (Tc)

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.16Ohm

Published :

2009

Mount :

Through Hole

Brand :

IXYS

Max Operating Temperature :

150 °C

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

900V

Package / Case :

TO-264-3, TO-264AA

Power Dissipation-Max (Abs) :

1250 W

Supplier Device Package :

PLUS264™

Vgs (Max) :

±30V

Minimum Operating Temperature :

- 55 C