IXFB50N80Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Minimum Operating Temperature :

- 55 C

Power Dissipation :

890W

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Element Configuration :

Single

Packaging :

Tube

Number of Pins :

264

Reach Compliance Code :

Compliant

Transistor Type :

1 N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±30V

Number of Terminations :

3

Package / Case :

TO-264-3, TO-264AA

Product Category :

MOSFET

Power Dissipation (Max) :

1135W (Tc)

Brand :

IXYS

Product Status :

Active

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

200A

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Height :

26.59mm

Drain to Source Voltage (Vdss) :

800V

Rds On (Max) @ Id, Vgs :

160m Ω @ 500mA, 10V

Pin Count :

3

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.15 Ω

Fall Time (Typ) :

13 ns

Lead Free :

Lead Free

Factory Lead Time :

26 Weeks

Package :

Tube

Manufacturer :

IXYS

Product Type :

MOSFET

Continuous Drain Current (ID) :

50A

Rise Time :

25ns

Terminal Position :

Single

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

800V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Polarity :

N-Channel

JESD-609 Code :

e1

Tradename :

HiPerFET

Additional Feature :

AVALANCHE RATED

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

50 A

Avalanche Energy Rating (Eas) :

5000 mJ

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

THROUGH-HOLE

Series :

HiPerFET™

DS Breakdown Voltage-Min :

800 V

JESD-30 Code :

R-PSIP-T3

Power Dissipation-Max (Abs) :

890 W

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Base Product Number :

IXFB50

Channel Mode :

Enhancement

Turn-Off Delay Time :

60 ns

Number of Terminals :

3

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

PLUS264™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

5.31mm

Transistor Element Material :

SILICON

Mounting Style :

Through Hole

Turn On Delay Time :

26 ns

Pbfree Code :

yes

Power Dissipation-Max :

1135W Tc

Case Connection :

DRAIN

Surface Mount :

No

FET Feature :

--

Length :

20.29mm

Polarity/Channel Type :

N-Channel

Configuration :

Single

Number of Channels :

1 Channel

RoHS :

Details