IRGSL30B60KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

237 ns

Height :

9.652mm

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Tube

Power Dissipation :

370W

JESD-609 Code :

e3

Max Collector Current :

78A

Test Condition :

400V, 30A, 10 Ω, 15V

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

Factory Lead Time :

11 Weeks

Mount :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

Motor Control

Radiation Hardening :

No

Turn On Time :

74 ns

Collector Emitter Voltage (VCEO) :

2.35V

Case Connection :

COLLECTOR

Number of Terminations :

3

Td (on/off) @ 25°C :

46ns/185ns

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Through Hole

Gate Charge :

102nC

Transistor Element Material :

SILICON

Length :

10.668mm

Width :

4.826mm

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Element Configuration :

Single

Fall Time-Max (tf) :

42ns

Gate-Emitter Thr Voltage-Max :

5.5V

IGBT Type :

NPT

Input Type :

Standard

Current - Collector Pulsed (Icm) :

120A

Switching Energy :

350μJ (on), 825μJ (off)

Weight :

2.084002g

Polarity/Channel Type :

N-Channel

Published :

2005

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

370W

Collector Emitter Saturation Voltage :

2.35V

Collector Emitter Breakdown Voltage :

600V

Operating Temperature :

-55°C~175°C TJ