IRGSL15B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Turn On Time :

52 ns

Packaging :

Tube

Gate Charge :

56nC

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

92 ns

Collector Emitter Voltage (VCEO) :

2.2V

RoHS Status :

RoHS Compliant

Gate-Emitter Voltage-Max :

20V

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Transistor Application :

Motor Control

Input Type :

Standard

Additional Feature :

ULTRA FAST

Mount :

Through Hole

Test Condition :

400V, 15A, 22 Ω, 15V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Terminations :

3

Case Connection :

COLLECTOR

Number of Pins :

3

Number of Elements :

1

Published :

2005

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

231 ns

Switching Energy :

220μJ (on), 340μJ (off)

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 15A

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

208W

Gate-Emitter Thr Voltage-Max :

5.5V

Radiation Hardening :

No

ECCN Code :

EAR99

Rise Time-Max :

25ns

Factory Lead Time :

16 Weeks

IGBT Type :

NPT

Current - Collector Pulsed (Icm) :

62A

Max Collector Current :

31A

Td (on/off) @ 25°C :

34ns/184ns

Power - Max :

208W

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel