FQPF1N50

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Drain Current-Max (Abs) (ID) :

0.9A

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 250μA

Pulsed Drain Current-Max (IDM) :

3.6A

JESD-609 Code :

e3

Surface Mount :

No

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

DS Breakdown Voltage-Min :

500V

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

9 Ω @ 450mA, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Number of Terminations :

3

Number of Elements :

1

Drain to Source Voltage (Vdss) :

500V

Vgs (Max) :

±30V

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

Not Applicable

Drain-source On Resistance-Max :

9Ohm

Series :

QFET®

Case Connection :

Isolated

FET Type :

N-Channel

Power Dissipation-Max :

16W Tc

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

80 mJ

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

900mA Tc