FQPF10N20C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

38W Tc

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

9.5A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Published :

2013

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

72 ns

Rds On (Max) @ Id, Vgs :

360m Ω @ 4.75A, 10V

Turn-Off Delay Time :

70 ns

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Pbfree Code :

yes

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Weight :

2.27g

Mount :

Through Hole

Transistor Application :

SWITCHING

Series :

QFET®

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Rise Time :

92ns

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Height :

9.19mm

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Mounting Type :

Through Hole

Threshold Voltage :

4V

Power Dissipation :

38W

FET Type :

N-Channel

Turn On Delay Time :

11 ns

Current Rating :

9.5A

Width :

4.7mm

Length :

10.16mm

Voltage - Rated DC :

200V