FQPF11P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Width :

4.9mm

Current Rating :

-11.4A

Rise Time :

40ns

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

-60V

Resistance :

175mOhm

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

4 Weeks

Height :

16.07mm

Contact Plating :

Tin

Continuous Drain Current (ID) :

8.6A

Weight :

2.27g

Drain to Source Voltage (Vdss) :

60V

Series :

QFET®

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation :

30W

Transistor Application :

SWITCHING

Voltage - Rated DC :

-60V

Radiation Hardening :

No

Turn On Delay Time :

6.5 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Vgs (Max) :

±25V

Fall Time (Typ) :

45 ns

Published :

2004

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V

Mount :

Through Hole

Length :

10.36mm

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Through Hole

Power Dissipation-Max :

30W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

175m Ω @ 4.3A, 10V

Turn-Off Delay Time :

15 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Packaging :

Tube

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Package / Case :

TO-220-3 Full Pack

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

8.6A Tc