FQPF11P06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

175m Ω @ 4.3A, 10V

Mounting Type :

Through Hole

Resistance :

175mOhm

Width :

4.9mm

Package / Case :

TO-220-3 Full Pack

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Element Configuration :

Single

Transistor Element Material :

SILICON

Height :

16.07mm

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Turn On Delay Time :

6.5 ns

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±25V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Turn-Off Delay Time :

15 ns

Published :

2004

Number of Pins :

3

ECCN Code :

EAR99

Voltage - Rated DC :

-60V

Fall Time (Typ) :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Power Dissipation-Max :

30W Tc

Current - Continuous Drain (Id) @ 25°C :

8.6A Tc

Series :

QFET®

Current Rating :

-11.4A

Mount :

Through Hole

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Rise Time :

40ns

Number of Elements :

1

Packaging :

Tube

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-60V

Continuous Drain Current (ID) :

8.6A

Weight :

2.27g

Drain to Source Voltage (Vdss) :

60V

Length :

10.36mm

Power Dissipation :

30W

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant