FQPF10N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

700 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

38A

Surface Mount :

No

Case Connection :

Isolated

Published :

2007

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

HTS Code :

8541.29.00.95

Package / Case :

TO-220-3 Full Pack

FET Type :

N-Channel

DS Breakdown Voltage-Min :

600V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

9.5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Power Dissipation-Max :

50W Tc

Reach Compliance Code :

Compliant

Drain-source On Resistance-Max :

0.73Ohm

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

FRFET®

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 25V