FQPF10N20

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Packaging :

Tube

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Case Connection :

Isolated

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

38W

Continuous Drain Current (ID) :

9.5A

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Length :

10.16mm

Width :

4.7mm

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Radiation Hardening :

No

Weight :

2.27g

Mount :

Through Hole

Threshold Voltage :

4V

Fall Time (Typ) :

72 ns

Power Dissipation-Max :

38W Tc

Number of Elements :

1

Factory Lead Time :

4 Weeks

Rise Time :

92ns

Rds On (Max) @ Id, Vgs :

360m Ω @ 4.75A, 10V

Drain to Source Breakdown Voltage :

200V

Voltage - Rated DC :

200V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

70 ns

JEDEC-95 Code :

TO-220AB

Height :

9.19mm

FET Type :

N-Channel

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Published :

2013

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Turn On Delay Time :

11 ns

Current Rating :

9.5A

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V