FQPF10N50CF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

40A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2096pF @ 25V

Current Rating :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

141 ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Rise Time :

80ns

Number of Terminations :

3

Drain to Source Breakdown Voltage :

500V

Series :

FRFET®

Factory Lead Time :

4 Weeks

Element Configuration :

Single

Fall Time (Typ) :

80 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation :

48W

Lead Free :

Lead Free

Pbfree Code :

yes

Additional Feature :

FAST SWITCHING

Power Dissipation-Max :

48W Tc

Mount :

Through Hole

Resistance :

610mOhm

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

610m Ω @ 5A, 10V

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

JESD-609 Code :

e3

Turn On Delay Time :

29 ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

FET Type :

N-Channel

Voltage - Rated DC :

500V

Continuous Drain Current (ID) :

10A

Weight :

2.27g

Terminal Finish :

Tin (Sn)

Number of Pins :

3