FQPF10N60CT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9.5A

Rise Time :

69ns

Power Dissipation :

50W

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

730m Ω @ 4.75A, 10V

Number of Pins :

3

Series :

QFET®

Fall Time (Typ) :

77 ns

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

50W Tc

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

FET Type :

N-Channel

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Weight :

2.27g

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-220-3 Full Pack

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 25V

Turn-Off Delay Time :

144 ns

Vgs (Max) :

±30V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA