FQPF11N40C
- Mfr.Part #
- FQPF11N40C
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3,014
- In Stock :
- 3,014
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 81 ns
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 89ns
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 400V
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Series :
- QFET®
- Continuous Drain Current (ID) :
- 10.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.7mm
- Drain to Source Breakdown Voltage :
- 400V
- Vgs (Max) :
- ±30V
- Weight :
- 2.27g
- Gate to Source Voltage (Vgs) :
- 30V
- Turn On Delay Time :
- 14 ns
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 44W
- Turn-Off Delay Time :
- 81 ns
- Lead Free :
- Lead Free
- Length :
- 10.16mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Height :
- 9.19mm
- Power Dissipation-Max :
- 44W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Published :
- 2013
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090pF @ 25V
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 5.25A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Case Connection :
- Isolated
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Current Rating :
- 10.5A
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- Package / Case :
- TO-220-3 Full Pack
- Pulsed Drain Current-Max (IDM) :
- 42A
- Datasheets
- FQPF11N40C

N-Channel Tube 530m Ω @ 5.25A, 10V ±30V 1090pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FQPF11N40C Description
Utilizing exclusive planar stripe and DMOS technology from ON Semiconductor, the FQPF11N40C N-Channel enhancement mode power MOSFET is created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.
FQPF11N40C Features
-
Low Crss (Typ. 85 pF)
-
100% Avalanche Tested
-
Low Gate Charge (Typ. 28 nC)
-
These Devices are Pb?Free and are RoHS Compliant
-
10.5 A, 400 V, RDS(on) = 530 m (Max.) @ VGS = 10 V, ID = 5.25 A
FQPF11N40C Applications
-
Industrial
-
Enterprise systems
-
Communications equipment
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