FQPF11N40C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

44W

Pulsed Drain Current-Max (IDM) :

42A

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

400V

Power Dissipation-Max :

44W Tc

Mount :

Through Hole

JESD-609 Code :

e3

Continuous Drain Current (ID) :

10.5A

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1090pF @ 25V

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

400V

Rise Time :

89ns

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Length :

10.16mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

4 Weeks

Turn On Delay Time :

14 ns

Package / Case :

TO-220-3 Full Pack

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

81 ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

530m Ω @ 5.25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

FET Type :

N-Channel

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Weight :

2.27g

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

RoHS Status :

ROHS3 Compliant

Current Rating :

10.5A

Turn-Off Delay Time :

81 ns

JEDEC-95 Code :

TO-220AB

Height :

9.19mm

Element Configuration :

Single

Width :

4.7mm

Number of Pins :

3

Number of Elements :

1

Contact Plating :

Tin

Qualification Status :

Not Qualified

Packaging :

Tube

Published :

2013

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V