FQPF11N40C

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Mfr.Part #
FQPF11N40C
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Stock
3,014
In Stock :
3,014

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
4 Weeks
Weight :
2.27g
Package / Case :
TO-220-3 Full Pack
Number of Pins :
3
Input Capacitance (Ciss) (Max) @ Vds :
1090pF @ 25V
FET Type :
N-Channel
Vgs (Max) :
±30V
Element Configuration :
Single
Pulsed Drain Current-Max (IDM) :
42A
Fall Time (Typ) :
81 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Rise Time :
89ns
Published :
2013
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
30V
Drain to Source Breakdown Voltage :
400V
JEDEC-95 Code :
TO-220AB
Voltage - Rated DC :
400V
Power Dissipation-Max :
44W Tc
Series :
QFET®
Lead Free :
Lead Free
Reach Compliance Code :
not_compliant
Case Connection :
Isolated
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
530m Ω @ 5.25A, 10V
Turn-Off Delay Time :
81 ns
Length :
10.16mm
Continuous Drain Current (ID) :
10.5A
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Number of Terminations :
3
JESD-609 Code :
e3
Contact Plating :
Tin
Current Rating :
10.5A
Mounting Type :
Through Hole
Height :
9.19mm
Turn On Delay Time :
14 ns
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Width :
4.7mm
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
10.5A Tc
Packaging :
Tube
Pbfree Code :
yes
Power Dissipation :
44W
Number of Elements :
1
Transistor Application :
SWITCHING
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF11N40C from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, FQPF11N40C pinout, FQPF11N40C datasheet PDF, FQPF11N40C amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF11N40C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF11N40C


N-Channel Tube 530m Ω @ 5.25A, 10V ±30V 1090pF @ 25V 35nC @ 10V TO-220-3 Full Pack

FQPF11N40C Description


Utilizing exclusive planar stripe and DMOS technology from ON Semiconductor, the FQPF11N40C N-Channel enhancement mode power MOSFET is created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.



FQPF11N40C Features


  • Low Crss (Typ. 85 pF)

  • 100% Avalanche Tested

  • Low Gate Charge (Typ. 28 nC)

  • These Devices are Pb?Free and are RoHS Compliant

  • 10.5 A, 400 V, RDS(on) = 530 m (Max.) @ VGS = 10 V, ID = 5.25 A



FQPF11N40C Applications


  • Industrial

  • Enterprise systems

  • Communications equipment


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