FQPF11N40CT
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- Mfr.Part #
- FQPF11N40CT
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10.5A TO220F
- Stock
- 25,536
- In Stock ：
- 25,536
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 10.5A Tc
- Rds On (Max) @ Id, Vgs :
- 530m Ω @ 5.25A, 10V
- Fall Time (Typ) :
- 81 ns
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 400V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Rise Time :
- 89ns
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1090pF @ 25V
- Mount :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 44W Tc
- Continuous Drain Current (ID) :
- 10.5A
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 44W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Lead Free :
- Lead Free
- Current Rating :
- 10.5A
- Turn-Off Delay Time :
- 81 ns
- Weight :
- 2.27g
- Voltage - Rated DC :
- 400V
- Published :
- 2011
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Datasheets
- FQPF11N40CT
N-Channel Tube 530m Ω @ 5.25A, 10V ±30V 1090pF @ 25V 35nC @ 10V TO-220-3 Full Pack
FQPF11N40CT Overview
A device's maximum input capacitance is 1090pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 10.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 81 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
FQPF11N40CT Features
a continuous drain current (ID) of 10.5A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 81 ns
FQPF11N40CT Applications
There are a lot of ON Semiconductor
FQPF11N40CT applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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