FQPF11N50CF

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Mfr.Part #
FQPF11N50CF
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 11A TO220F
Stock
1,188
In Stock :
1,188

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
120 ns
Published :
2013
Width :
4.9mm
ECCN Code :
EAR99
Fall Time (Typ) :
75 ns
Mount :
Through Hole
Height :
16.07mm
Case Connection :
Isolated
Avalanche Energy Rating (Eas) :
670 mJ
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Continuous Drain Current (ID) :
11A
Drain to Source Breakdown Voltage :
500V
Series :
FRFET®
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn On Delay Time :
24 ns
Factory Lead Time :
9 Weeks
Length :
10.36mm
Power Dissipation :
48W
Operating Mode :
ENHANCEMENT MODE
Rise Time :
70ns
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Package / Case :
TO-220-3 Full Pack
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Number of Terminations :
3
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Mounting Type :
Through Hole
Vgs (Max) :
±30V
Drain-source On Resistance-Max :
0.55Ohm
Input Capacitance (Ciss) (Max) @ Vds :
2055pF @ 25V
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
FET Type :
N-Channel
JESD-609 Code :
e3
Number of Elements :
1
Vgs(th) (Max) @ Id :
4V @ 250µA
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
Reach Compliance Code :
not_compliant
Power Dissipation-Max :
48W Tc
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Tin (Sn)
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
550m Ω @ 5.5A, 10V
Weight :
2.27g
Pulsed Drain Current-Max (IDM) :
44A
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, FQPF11N50CF pinout, FQPF11N50CF datasheet PDF, FQPF11N50CF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF11N50CF


N-Channel Tube 550m Ω @ 5.5A, 10V ±30V 2055pF @ 25V 55nC @ 10V TO-220-3 Full Pack

FQPF11N50CF    Description


  This N-channel enhanced power MOSFET FQPF11N50CF   is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.


FQPF11N50CF    Features

 

11A, 500V, RDS(on) = 550mΩ(Max.) @VGS = 10 V, ID = 5.5A

Low gate charge ( Typ. 43nC)

Low Crss ( Typ. 20pF)

100% avalanche tested

Fast recovery body diode (Typ. 90ns)


FQPF11N50CF     Applications

LCD TV

PDP TV

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