FQPF11N50CF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.07mm

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

44A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

120 ns

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

550m Ω @ 5.5A, 10V

Power Dissipation :

48W

Continuous Drain Current (ID) :

11A

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Width :

4.9mm

Fall Time (Typ) :

75 ns

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Length :

10.36mm

Rise Time :

70ns

Reach Compliance Code :

not_compliant

Mount :

Through Hole

Drain to Source Breakdown Voltage :

500V

Series :

FRFET®

Number of Pins :

3

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3 Full Pack

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Factory Lead Time :

9 Weeks

Avalanche Energy Rating (Eas) :

670 mJ

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.55Ohm

Power Dissipation-Max :

48W Tc

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Case Connection :

Isolated

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

24 ns

Element Configuration :

Single

Published :

2013

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

2.27g