FQPF11N50CF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

120 ns

Pbfree Code :

yes

Power Dissipation :

48W

Mount :

Through Hole

JESD-609 Code :

e3

Published :

2013

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

550m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

Number of Elements :

1

Height :

16.07mm

Packaging :

Tube

Power Dissipation-Max :

48W Tc

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3 Full Pack

Continuous Drain Current (ID) :

11A

Reach Compliance Code :

not_compliant

Number of Terminations :

3

Vgs (Max) :

±30V

Case Connection :

Isolated

Turn On Delay Time :

24 ns

Drain to Source Breakdown Voltage :

500V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

2.27g

Avalanche Energy Rating (Eas) :

670 mJ

Length :

10.36mm

Series :

FRFET®

Width :

4.9mm

Fall Time (Typ) :

75 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Factory Lead Time :

9 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

11A Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

44A

Rise Time :

70ns

Element Configuration :

Single

Drain-source On Resistance-Max :

0.55Ohm