FQPF11N50CF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

550m Ω @ 5.5A, 10V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Element Configuration :

Single

Turn-Off Delay Time :

120 ns

Published :

2013

Number of Elements :

1

Reach Compliance Code :

not_compliant

Length :

10.36mm

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

9 Weeks

Number of Pins :

3

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

500V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

2055pF @ 25V

Power Dissipation :

48W

Mount :

Through Hole

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

670 mJ

Weight :

2.27g

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

75 ns

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

44A

FET Type :

N-Channel

Turn On Delay Time :

24 ns

Series :

FRFET®

ECCN Code :

EAR99

Width :

4.9mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

48W Tc

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Height :

16.07mm

Drain-source On Resistance-Max :

0.55Ohm

Rise Time :

70ns

Continuous Drain Current (ID) :

11A

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V