FQPF11N50CF

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Mfr.Part #
FQPF11N50CF
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 11A TO220F
Stock
1,188
In Stock :
1,188

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
2055pF @ 25V
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Height :
16.07mm
Mounting Type :
Through Hole
Number of Pins :
3
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
48W
Power Dissipation-Max :
48W Tc
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
30V
Pulsed Drain Current-Max (IDM) :
44A
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Avalanche Energy Rating (Eas) :
670 mJ
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Published :
2013
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
9 Weeks
Rise Time :
70ns
Terminal Finish :
Tin (Sn)
Drain to Source Breakdown Voltage :
500V
Turn On Delay Time :
24 ns
Weight :
2.27g
Series :
FRFET®
Fall Time (Typ) :
75 ns
Width :
4.9mm
Mount :
Through Hole
Case Connection :
Isolated
Turn-Off Delay Time :
120 ns
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Package / Case :
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs :
550m Ω @ 5.5A, 10V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Drain-source On Resistance-Max :
0.55Ohm
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
11A
JESD-609 Code :
e3
Vgs (Max) :
±30V
Length :
10.36mm
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3 Full Pack, FQPF11N50CF pinout, FQPF11N50CF datasheet PDF, FQPF11N50CF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF11N50CF


N-Channel Tube 550m Ω @ 5.5A, 10V ±30V 2055pF @ 25V 55nC @ 10V TO-220-3 Full Pack

FQPF11N50CF    Description


  This N-channel enhanced power MOSFET FQPF11N50CF   is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.


FQPF11N50CF    Features

 

11A, 500V, RDS(on) = 550mΩ(Max.) @VGS = 10 V, ID = 5.5A

Low gate charge ( Typ. 43nC)

Low Crss ( Typ. 20pF)

100% avalanche tested

Fast recovery body diode (Typ. 90ns)


FQPF11N50CF     Applications

LCD TV

PDP TV

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