FQPF11N50CF

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Mfr.Part #
FQPF11N50CF
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 11A TO220F
Stock
1,188
In Stock :
1,188

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Mounting Type :
Through Hole
Width :
4.9mm
Fall Time (Typ) :
75 ns
Power Dissipation :
48W
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
500V
Factory Lead Time :
9 Weeks
Avalanche Energy Rating (Eas) :
670 mJ
Power Dissipation-Max :
48W Tc
JESD-609 Code :
e3
Mount :
Through Hole
Drain-source On Resistance-Max :
0.55Ohm
JEDEC-95 Code :
TO-220AB
Published :
2013
Rise Time :
70ns
ECCN Code :
EAR99
FET Type :
N-Channel
Length :
10.36mm
Weight :
2.27g
Series :
FRFET®
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Pulsed Drain Current-Max (IDM) :
44A
Turn-Off Delay Time :
120 ns
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
11A
Vgs (Max) :
±30V
Rds On (Max) @ Id, Vgs :
550m Ω @ 5.5A, 10V
Case Connection :
Isolated
Package / Case :
TO-220-3 Full Pack
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Number of Terminations :
3
Height :
16.07mm
Turn On Delay Time :
24 ns
Input Capacitance (Ciss) (Max) @ Vds :
2055pF @ 25V
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Pbfree Code :
yes
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FQPF11N50CF pinout, FQPF11N50CF datasheet PDF, FQPF11N50CF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF11N50CF


N-Channel Tube 550m Ω @ 5.5A, 10V ±30V 2055pF @ 25V 55nC @ 10V TO-220-3 Full Pack

FQPF11N50CF    Description


  This N-channel enhanced power MOSFET FQPF11N50CF   is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.


FQPF11N50CF    Features

 

11A, 500V, RDS(on) = 550mΩ(Max.) @VGS = 10 V, ID = 5.5A

Low gate charge ( Typ. 43nC)

Low Crss ( Typ. 20pF)

100% avalanche tested

Fast recovery body diode (Typ. 90ns)


FQPF11N50CF     Applications

LCD TV

PDP TV

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