FQPF11N50CF

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Mfr.Part #
FQPF11N50CF
Manufacturer
onsemi
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 500V 11A TO220F
Stock
1,188
In Stock :
1,188

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Case Connection :
Isolated
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
550m Ω @ 5.5A, 10V
JEDEC-95 Code :
TO-220AB
Mounting Type :
Through Hole
Package / Case :
TO-220-3 Full Pack
Terminal Finish :
Tin (Sn)
Packaging :
Tube
Element Configuration :
Single
Turn-Off Delay Time :
120 ns
Published :
2013
Number of Elements :
1
Reach Compliance Code :
not_compliant
Length :
10.36mm
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
9 Weeks
Number of Pins :
3
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
500V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
2055pF @ 25V
Power Dissipation :
48W
Mount :
Through Hole
Transistor Application :
SWITCHING
Avalanche Energy Rating (Eas) :
670 mJ
Weight :
2.27g
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
75 ns
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Pulsed Drain Current-Max (IDM) :
44A
FET Type :
N-Channel
Turn On Delay Time :
24 ns
Series :
FRFET®
ECCN Code :
EAR99
Width :
4.9mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Power Dissipation-Max :
48W Tc
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Height :
16.07mm
Drain-source On Resistance-Max :
0.55Ohm
Rise Time :
70ns
Continuous Drain Current (ID) :
11A
Gate to Source Voltage (Vgs) :
30V
Vgs (Max) :
±30V
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Introducing Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3 Full Pack, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FQPF11N50CF pinout, FQPF11N50CF datasheet PDF, FQPF11N50CF amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQPF11N50CF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQPF11N50CF


N-Channel Tube 550m Ω @ 5.5A, 10V ±30V 2055pF @ 25V 55nC @ 10V TO-220-3 Full Pack

FQPF11N50CF    Description


  This N-channel enhanced power MOSFET FQPF11N50CF   is produced using on Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is specifically tailored to reduce on-resistance and provides excellent switching performance and high avalanche energy intensity. These devices are suitable for switching mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.


FQPF11N50CF    Features

 

11A, 500V, RDS(on) = 550mΩ(Max.) @VGS = 10 V, ID = 5.5A

Low gate charge ( Typ. 43nC)

Low Crss ( Typ. 20pF)

100% avalanche tested

Fast recovery body diode (Typ. 90ns)


FQPF11N50CF     Applications

LCD TV

PDP TV

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