FQPF10N20

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Published :

2013

Element Configuration :

Single

Power Dissipation-Max :

38W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

360m Ω @ 4.75A, 10V

Weight :

2.27g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

200V

Current - Continuous Drain (Id) @ 25°C :

9.5A Tc

Number of Terminations :

3

Packaging :

Tube

Current Rating :

9.5A

Drain to Source Breakdown Voltage :

200V

Radiation Hardening :

No

Package / Case :

TO-220-3 Full Pack

Height :

9.19mm

Vgs (Max) :

±30V

Factory Lead Time :

4 Weeks

Power Dissipation :

38W

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Number of Pins :

3

Threshold Voltage :

4V

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11 ns

Fall Time (Typ) :

72 ns

Series :

QFET®

Pbfree Code :

yes

Case Connection :

Isolated

Rise Time :

92ns

Mounting Type :

Through Hole

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Turn-Off Delay Time :

70 ns

Length :

10.16mm

Continuous Drain Current (ID) :

9.5A

Width :

4.7mm

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

FET Type :

N-Channel