FQPF10N20
- Mfr.Part #
- FQPF10N20
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 6.8A TO220F
- Stock
- 87,550
- In Stock :
- 87,550
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 2.27g
- Voltage - Rated DC :
- 200V
- ECCN Code :
- EAR99
- Height :
- 9.19mm
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.16mm
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 72 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Series :
- QFET®
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 70 ns
- Lead Free :
- Lead Free
- Power Dissipation :
- 38W
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Published :
- 2013
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 9.5A
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Threshold Voltage :
- 4V
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A Tc
- Case Connection :
- Isolated
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Rise Time :
- 92ns
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Transistor Element Material :
- SILICON
- Width :
- 4.7mm
- Mount :
- Through Hole
- Current Rating :
- 9.5A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 38W Tc
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 4.75A, 10V
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 11 ns
- Datasheets
- FQPF10N20
FQPF10N20 Documents

N-Channel Tube 360m Ω @ 4.75A, 10V ±30V 510pF @ 25V 26nC @ 10V TO-220-3 Full Pack
FQPF10N20C Description
The FQPF10N20C is a QFET? N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce ON-state resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FQPF10N20C Features
-
9.5A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 4.75A
-
Low gate charge ( Typ. 20nC)
-
Low Crss ( Typ. 40.5pF)
-
100% avalanche tested
-
40.5pF typical low Crss
FQPF10N20C Applications
-
Switched-mode power supplies
-
Active power factor correction (PFC)
-
Electronic lamp ballasts
-
CRT
-
RPTV
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