FQPF10N60CF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

38A

Drain to Source Voltage (Vdss) :

600V

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

600V

Published :

2007

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Case Connection :

Isolated

Drain Current-Max (Abs) (ID) :

9.5A

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.73Ohm

Power Dissipation-Max :

50W Tc

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Rds On (Max) @ Id, Vgs :

800m Ω @ 4.5A, 10V

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2040pF @ 25V

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

700 mJ

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

N-Channel

Series :

FRFET®