FGH40T120SMD-F155

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Pbfree Code :

yes

Number of Pins :

3

Collector Emitter Breakdown Voltage :

1.2kV

Published :

2013

Contact Plating :

Tin

Test Condition :

600V, 40A, 10 Ω, 15V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

TO-247-3

Collector Emitter Saturation Voltage :

1.8V

IGBT Type :

Trench Field Stop

Gate-Emitter Voltage-Max :

25V

Max Power Dissipation :

555W

Weight :

6.39g

Factory Lead Time :

5 Weeks

Mounting Type :

Through Hole

Power Dissipation :

555W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

80A

Turn On Delay Time :

40 ns

Height :

24.75mm

Gate Charge :

370nC

Voltage - Collector Emitter Breakdown (Max) :

1200V

Operating Temperature :

-55°C~175°C TJ

Switching Energy :

2.7mJ (on), 1.1mJ (off)

Max Junction Temperature (Tj) :

175°C

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Input Type :

Standard

Packaging :

Tube

Element Configuration :

Single

Gate-Emitter Thr Voltage-Max :

7.5V

Turn-Off Delay Time :

475 ns

Mount :

Through Hole

Reverse Recovery Time :

65 ns

Continuous Collector Current :

80A

Collector Emitter Voltage (VCEO) :

1.2kV

Radiation Hardening :

No

Current - Collector Pulsed (Icm) :

160A

Td (on/off) @ 25°C :

40ns/475ns

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free