FGH40N65UFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

80A

Td (on/off) @ 25°C :

24ns/112ns

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

650V

Number of Terminations :

3

Number of Elements :

1

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 40A, 10 Ω, 15V

Transistor Application :

POWER CONTROL

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

120A

Turn Off Time-Nom (toff) :

160 ns

Max Power Dissipation :

290W

Reverse Recovery Time :

45 ns

IGBT Type :

Field Stop

REACH SVHC :

No SVHC

Case Connection :

COLLECTOR

Switching Energy :

1.19mJ (on), 460μJ (off)

Gate Charge :

120nC

Power - Max :

290W

Weight :

6.39g

Radiation Hardening :

No

Pbfree Code :

yes

Package / Case :

TO-247-3

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Turn On Time :

69 ns

Gate-Emitter Thr Voltage-Max :

6.5V

JEDEC-95 Code :

TO-247AB

Gate-Emitter Voltage-Max :

20V

Length :

15.6mm

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

650V

Additional Feature :

LOW CONDUCTION LOSS

Height :

20.6mm

Collector Emitter Saturation Voltage :

650V

Fall Time-Max (tf) :

60ns

Transistor Element Material :

SILICON

Number of Pins :

3

HTS Code :

8541.29.00.95

Input Type :

Standard

Element Configuration :

Single

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Published :

2008