FGH40N60SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

2.1V

Gate Charge :

119nC

Input Type :

Standard

Height :

20.6mm

Lead Free :

Lead Free

Package / Case :

TO-247-3

Number of Pins :

3

Turn Off Time-Nom (toff) :

132 ns

Factory Lead Time :

5 Weeks

Weight :

6.39g

Td (on/off) @ 25°C :

12ns/92ns

Additional Feature :

LOW CONDUCTION LOSS

Turn On Time :

37 ns

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

ECCN Code :

EAR99

Mounting Type :

Through Hole

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Voltage (VCEO) :

600V

Width :

4.7mm

JEDEC-95 Code :

TO-247AB

Polarity/Channel Type :

N-Channel

Published :

2013

Current - Collector Pulsed (Icm) :

120A

IGBT Type :

Field Stop

Case Connection :

COLLECTOR

Reverse Recovery Time :

36 ns

Length :

15.6mm

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Base Part Number :

FGH40N60

HTS Code :

8541.29.00.95

Test Condition :

400V, 40A, 6 Ω, 15V

Fall Time-Max (tf) :

17ns

Transistor Element Material :

SILICON

Power - Max :

349W

RoHS Status :

ROHS3 Compliant

Switching Energy :

870μJ (on), 260μJ (off)

Radiation Hardening :

No

Packaging :

Tube

Gate-Emitter Thr Voltage-Max :

6V

Gate-Emitter Voltage-Max :

20V

Number of Elements :

1

Rise Time-Max :

28ns

Number of Terminations :

3

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

600V

Transistor Application :

POWER CONTROL

Max Power Dissipation :

349W

Pbfree Code :

yes