FGH40N60SMD

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Additional Feature :

LOW CONDUCTION LOSS

HTS Code :

8541.29.00.95

Power - Max :

349W

Case Connection :

COLLECTOR

Height :

20.6mm

Terminal Finish :

Tin (Sn)

Base Part Number :

FGH40N60

Turn Off Time-Nom (toff) :

132 ns

Element Configuration :

Single

Current - Collector Pulsed (Icm) :

120A

Package / Case :

TO-247-3

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Elements :

1

Test Condition :

400V, 40A, 6 Ω, 15V

Input Type :

Standard

JEDEC-95 Code :

TO-247AB

Collector Emitter Breakdown Voltage :

600V

Reverse Recovery Time :

36 ns

Gate-Emitter Thr Voltage-Max :

6V

Factory Lead Time :

5 Weeks

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Collector Emitter Saturation Voltage :

2.1V

Switching Energy :

870μJ (on), 260μJ (off)

Mount :

Through Hole

Published :

2013

Collector Emitter Voltage (VCEO) :

600V

Weight :

6.39g

Packaging :

Tube

Length :

15.6mm

ECCN Code :

EAR99

IGBT Type :

Field Stop

Gate Charge :

119nC

JESD-609 Code :

e3

Rise Time-Max :

28ns

Td (on/off) @ 25°C :

12ns/92ns

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Max Collector Current :

80A

Turn On Time :

37 ns

Width :

4.7mm

Mounting Type :

Through Hole

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Number of Terminations :

3

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Polarity/Channel Type :

N-Channel

Fall Time-Max (tf) :

17ns

Max Power Dissipation :

349W