FGH40N60UFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Additional Feature :

LOW CONDUCTION LOSS

Lead Free :

Lead Free

Gate-Emitter Voltage-Max :

20V

Published :

2009

Pbfree Code :

yes

Height :

20.6mm

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

HTS Code :

8541.29.00.95

Mount :

Through Hole

Power - Max :

290W

Input Type :

Standard

Turn On Time :

110 ns

Transistor Element Material :

SILICON

Turn On Delay Time :

24 ns

IGBT Type :

Field Stop

Collector Emitter Voltage (VCEO) :

600V

Polarity/Channel Type :

N-Channel

REACH SVHC :

No SVHC

Width :

4.7mm

Reverse Recovery Time :

45 ns

Current - Collector Pulsed (Icm) :

120A

Td (on/off) @ 25°C :

24ns/112ns

Max Collector Current :

80A

Collector Emitter Breakdown Voltage :

600V

Fall Time-Max (tf) :

100ns

JESD-609 Code :

e3

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Collector Emitter Saturation Voltage :

600V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

1.19mJ (on), 460μJ (off)

Gate-Emitter Thr Voltage-Max :

6.5V

Test Condition :

400V, 40A, 10 Ω, 15V

Case Connection :

COLLECTOR

Turn-Off Delay Time :

112 ns

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Gate Charge :

120nC

Base Part Number :

FGH40N60

Number of Pins :

3

JEDEC-95 Code :

TO-247AB

Max Power Dissipation :

290W

Length :

15.6mm

Weight :

6.39g

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

190 ns

ECCN Code :

EAR99