FGH40N60SFDTU
- Mfr.Part #
- FGH40N60SFDTU
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 600V 80A TO247-3
- Stock
- 2,447
- In Stock :
- 2,447
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 120A
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- IGBT Type :
- Field Stop
- Mount :
- Through Hole
- Switching Energy :
- 1.13mJ (on), 310μJ (off)
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Base Part Number :
- FGH40N60
- Gate Charge :
- 120nC
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Radiation Hardening :
- No
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 10 Weeks
- Turn On Time :
- 108 ns
- Number of Terminations :
- 3
- Published :
- 2004
- Power - Max :
- 290W
- Polarity/Channel Type :
- N-Channel
- Turn-Off Delay Time :
- 115 ns
- Vce(on) (Max) @ Vge, Ic :
- 2.9V @ 15V, 40A
- Turn Off Time-Nom (toff) :
- 170 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 600V
- Weight :
- 6.39g
- Max Power Dissipation :
- 290W
- Max Collector Current :
- 80A
- Lead Free :
- Lead Free
- Reverse Recovery Time :
- 45 ns
- Additional Feature :
- LOW CONDUCTION LOSS
- HTS Code :
- 8541.29.00.95
- Td (on/off) @ 25°C :
- 25ns/115ns
- Test Condition :
- 400V, 40A, 10 Ω, 15V
- Fall Time-Max (tf) :
- 90ns
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Number of Pins :
- 3
- Width :
- 4.82mm
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-247AB
- Transistor Application :
- POWER CONTROL
- Length :
- 15.87mm
- JESD-609 Code :
- e3
- Input Type :
- Standard
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 20.82mm
- Transistor Element Material :
- SILICON
- Gate-Emitter Voltage-Max :
- 20V
- Turn On Delay Time :
- 25 ns
- Pbfree Code :
- yes
- Datasheets
- FGH40N60SFDTU

FGH40N60SFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40N60SFDTU Description
ON Semiconductor's FGH40N60SFDTU transistor is a single IGBT transistor. FGH40N60SFDTU's operational temperature is -55°C to 150°C TJ, and its maximum power dissipation is 290W. It comes packaged in the TO-247-3 format. ON Semiconductor's new Field Stop IGBTs use Novel Field Stop IGBT Technology to provide the best performance for automotive chargers, inverters, and other applications that require low conduction and switching losses.
FGH40N60SFDTU Features
? High Current Capability
? Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
? High Input Impedance
? Fast Switching
? Qualified to Automotive Requirements of AEC?Q101 (FGH40N60SFDTU?F085)
? These Devices are Pb?Free and are RoHS Compliant
FGH40N60SFDTU Applications
? Automotive Chargers, Converters, High Voltage Auxiliaries
? Inverters, PFC, UPS
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