FGH40N60SMD-F085

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

6 Weeks

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

2.1V

Mount :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Terminal Finish :

Tin (Sn)

Gate Charge :

180nC

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

JESD-609 Code :

e3

IGBT Type :

Field Stop

Reach Compliance Code :

not_compliant

Weight :

6.39g

Published :

2016

Element Configuration :

Single

Test Condition :

400V, 40A, 6 Ω, 15V

Power - Max :

349W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Series :

Automotive, AEC-Q101

Collector Emitter Breakdown Voltage :

600V

Number of Terminations :

3

Max Power Dissipation :

349W

Gate-Emitter Thr Voltage-Max :

6V

Number of Pins :

3

Pbfree Code :

yes

Package / Case :

TO-247-3

Switching Energy :

920μJ (on), 300μJ (off)

Transistor Application :

POWER CONTROL

Number of Elements :

1

Packaging :

Tube

Current - Collector Pulsed (Icm) :

120A

Reverse Recovery Time :

47 ns

Turn Off Time-Nom (toff) :

172.5 ns

Collector Emitter Voltage (VCEO) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AB

Fall Time-Max (tf) :

81ns

Input Type :

Standard

Max Collector Current :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Td (on/off) @ 25°C :

18ns/110ns

Turn On Time :

43.7 ns

Operating Temperature :

-55°C~175°C TJ

Gate-Emitter Voltage-Max :

20V