FGH40N60UFTU

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Mfr.Part #
FGH40N60UFTU
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
INSULATED GATE BIPOLAR TRANSISTO
Stock
27,726
In Stock :
27,726

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Collector Emitter Saturation Voltage :
1.8V
HTS Code :
8541.29.00.95
Gate-Emitter Voltage-Max :
20V
Mount :
Through Hole
Test Condition :
400V, 40A, 10 Ω, 15V
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-247AB
Current - Collector Pulsed (Icm) :
120A
Td (on/off) @ 25°C :
24ns/112ns
Collector Emitter Breakdown Voltage :
600V
Collector Emitter Voltage (VCEO) :
600V
Width :
4.7mm
ECCN Code :
EAR99
Element Configuration :
Single
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Radiation Hardening :
No
Factory Lead Time :
6 Weeks
Length :
15.6mm
Turn On Delay Time :
24 ns
Height :
20.6mm
Number of Elements :
1
Max Collector Current :
80A
Published :
2015
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
JESD-609 Code :
e3
IGBT Type :
Field Stop
Weight :
6.39g
Mounting Type :
Through Hole
Case Connection :
COLLECTOR
Packaging :
Tube
Gate-Emitter Thr Voltage-Max :
6.5V
Transistor Element Material :
SILICON
Base Part Number :
FGH40N60
Polarity/Channel Type :
N-Channel
Turn On Time :
110 ns
Additional Feature :
LOW CONDUCTION LOSS
Number of Pins :
3
Turn-Off Delay Time :
112 ns
Turn Off Time-Nom (toff) :
190 ns
Pbfree Code :
yes
REACH SVHC :
No SVHC
Input Type :
Standard
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time-Max (tf) :
100ns
Gate Charge :
120nC
Max Power Dissipation :
290W
Switching Energy :
1.19mJ (on), 460μJ (off)
Transistor Application :
POWER CONTROL
Number of Terminations :
3
Power - Max :
290W
Introducing Transistors - Bipolar (BJT) - Single onsemi FGH40N60UFTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:FGH40N60, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, FGH40N60UFTU pinout, FGH40N60UFTU datasheet PDF, FGH40N60UFTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FGH40N60UFTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH40N60UFTU


FGH40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

Description:

The ON Semiconductor FGH40N60UFTU is a single IGBT (Insulated Gate Bipolar Transistor) with a 600V blocking voltage and 80A continuous collector current rating. It is housed in a TO-247 package and has a power dissipation of 290W.

Features:

• 600V blocking voltage
• 80A continuous collector current rating
• 290W power dissipation
• TO-247 package
• Low gate charge
• Low on-state resistance
• High switching speed
• High surge current capability

Applications:

The FGH40N60UFTU IGBT is suitable for a wide range of applications, including motor control, power conversion, and power switching. It is also suitable for use in high-frequency switching applications, such as inverters, UPS systems, and solar inverters.
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