FGH40N60UFTU
- Mfr.Part #
- FGH40N60UFTU
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Stock
- 27,726
- In Stock :
- 27,726
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 600V
- Packaging :
- Tube
- Weight :
- 6.39g
- Turn On Delay Time :
- 24 ns
- Collector Emitter Voltage (VCEO) :
- 600V
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Input Type :
- Standard
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- IGBT Type :
- Field Stop
- Base Part Number :
- FGH40N60
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 40A
- Additional Feature :
- LOW CONDUCTION LOSS
- Td (on/off) @ 25°C :
- 24ns/112ns
- Max Collector Current :
- 80A
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 112 ns
- Gate Charge :
- 120nC
- Current - Collector Pulsed (Icm) :
- 120A
- Factory Lead Time :
- 6 Weeks
- Radiation Hardening :
- No
- HTS Code :
- 8541.29.00.95
- Height :
- 20.6mm
- Test Condition :
- 400V, 40A, 10 Ω, 15V
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Fall Time-Max (tf) :
- 100ns
- Length :
- 15.6mm
- Turn On Time :
- 110 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Switching Energy :
- 1.19mJ (on), 460μJ (off)
- Transistor Application :
- POWER CONTROL
- Gate-Emitter Voltage-Max :
- 20V
- Collector Emitter Saturation Voltage :
- 1.8V
- Case Connection :
- COLLECTOR
- Width :
- 4.7mm
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-247AB
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Transistor Element Material :
- SILICON
- Turn Off Time-Nom (toff) :
- 190 ns
- Published :
- 2015
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 290W
- Lead Free :
- Lead Free
- Power - Max :
- 290W
- Datasheets
- FGH40N60UFTU

FGH40N60UFTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
The ON Semiconductor FGH40N60UFTU is a single IGBT (Insulated Gate Bipolar Transistor) with a 600V blocking voltage and 80A continuous collector current rating. It is housed in a TO-247 package and has a power dissipation of 290W.
Features:
• 600V blocking voltage
• 80A continuous collector current rating
• 290W power dissipation
• TO-247 package
• Low gate charge
• Low on-state resistance
• High switching speed
• High surge current capability
Applications:
The FGH40N60UFTU IGBT is suitable for a wide range of applications, including motor control, power conversion, and power switching. It is also suitable for use in high-frequency switching applications, such as inverters, UPS systems, and solar inverters.
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