FGH40N60SMDF
- Mfr.Part #
- FGH40N60SMDF
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 600V 80A TO247-3
- Stock
- 25,301
- In Stock :
- 25,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Number of Pins :
- 3
- Switching Energy :
- 1.3mJ (on), 260μJ (off)
- Turn On Time :
- 37 ns
- Pbfree Code :
- yes
- Input Type :
- Standard
- Gate-Emitter Voltage-Max :
- 20V
- Rise Time-Max :
- 28ns
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 40A
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Max Collector Current :
- 80A
- Gate Charge :
- 119nC
- JESD-609 Code :
- e3
- Current - Collector Pulsed (Icm) :
- 120A
- Polarity/Channel Type :
- N-Channel
- HTS Code :
- 8541.29.00.95
- Transistor Application :
- POWER CONTROL
- Base Part Number :
- FGH40N60
- Fall Time-Max (tf) :
- 17ns
- Height :
- 20.6mm
- Package / Case :
- TO-247-3
- Collector Emitter Breakdown Voltage :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 92 ns
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 600V
- Max Power Dissipation :
- 349W
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- Collector Emitter Saturation Voltage :
- 1.9V
- Case Connection :
- COLLECTOR
- Mount :
- Through Hole
- Number of Elements :
- 1
- Weight :
- 6.39g
- JEDEC-95 Code :
- TO-247AB
- Gate-Emitter Thr Voltage-Max :
- 6V
- Turn On Delay Time :
- 12 ns
- Turn Off Time-Nom (toff) :
- 132 ns
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Reverse Recovery Time :
- 90ns
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 349W
- IGBT Type :
- Field Stop
- Published :
- 2013
- Width :
- 4.7mm
- Length :
- 15.6mm
- Factory Lead Time :
- 4 Weeks
- Td (on/off) @ 25°C :
- 12ns/92ns
- Datasheets
- FGH40N60SMDF

FGH40N60SMDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40N60SMDF IGBT Description
The FGH40N60SMDF IGBT employs ground-breaking field-stop IGBT technology, and ON Semiconductor's new series of field-stop 2nd generation IGBTs provides the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where minimal conduction and switching losses are crucial. It has high input impedance to avoid the loading effect to a large extent.
FGH40N60SMDF IGBT Features
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
High current handling capability
RoHS compliant
Tightened parameter distribution
High input impedance
Maximum junction temperature: =175 °C
Fast switching: EOFF: 6.5uJ/A
Positive temperature co-efficient for an easy parallel operating
FGH40N60SMDF IGBT Applications
Consumer Appliances
NTC Thermistors
Automotive Applications
Cable Load
Single-Ended Quasi-Resonant Topology
Class-E Power Amplifiers
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