FGH40N60SMDF
- Mfr.Part #
- FGH40N60SMDF
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 600V 80A TO247-3
- Stock
- 25,301
- In Stock :
- 25,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 40A
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 119nC
- JEDEC-95 Code :
- TO-247AB
- Turn On Delay Time :
- 12 ns
- Package / Case :
- TO-247-3
- IGBT Type :
- Field Stop
- Fall Time-Max (tf) :
- 17ns
- Current - Collector Pulsed (Icm) :
- 120A
- Base Part Number :
- FGH40N60
- Mounting Type :
- Through Hole
- Rise Time-Max :
- 28ns
- Power Dissipation :
- 349W
- Collector Emitter Saturation Voltage :
- 1.9V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Height :
- 20.6mm
- Case Connection :
- COLLECTOR
- Turn Off Time-Nom (toff) :
- 132 ns
- Width :
- 4.7mm
- Turn-Off Delay Time :
- 92 ns
- Weight :
- 6.39g
- HTS Code :
- 8541.29.00.95
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Element Configuration :
- Single
- Input Type :
- Standard
- Number of Terminations :
- 3
- Reverse Recovery Time :
- 90ns
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Turn On Time :
- 37 ns
- Gate-Emitter Voltage-Max :
- 20V
- Max Collector Current :
- 80A
- Published :
- 2013
- Switching Energy :
- 1.3mJ (on), 260μJ (off)
- Collector Emitter Voltage (VCEO) :
- 600V
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Packaging :
- Tube
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Td (on/off) @ 25°C :
- 12ns/92ns
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 600V
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 349W
- Contact Plating :
- Tin
- Transistor Application :
- POWER CONTROL
- Length :
- 15.6mm
- Datasheets
- FGH40N60SMDF

FGH40N60SMDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40N60SMDF IGBT Description
The FGH40N60SMDF IGBT employs ground-breaking field-stop IGBT technology, and ON Semiconductor's new series of field-stop 2nd generation IGBTs provides the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where minimal conduction and switching losses are crucial. It has high input impedance to avoid the loading effect to a large extent.
FGH40N60SMDF IGBT Features
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
High current handling capability
RoHS compliant
Tightened parameter distribution
High input impedance
Maximum junction temperature: =175 °C
Fast switching: EOFF: 6.5uJ/A
Positive temperature co-efficient for an easy parallel operating
FGH40N60SMDF IGBT Applications
Consumer Appliances
NTC Thermistors
Automotive Applications
Cable Load
Single-Ended Quasi-Resonant Topology
Class-E Power Amplifiers
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