FGH40N60SMDF
- Mfr.Part #
- FGH40N60SMDF
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 600V 80A TO247-3
- Stock
- 25,301
- In Stock :
- 25,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- IGBT Type :
- Field Stop
- Gate Charge :
- 119nC
- Polarity/Channel Type :
- N-Channel
- HTS Code :
- 8541.29.00.95
- Collector Emitter Breakdown Voltage :
- 600V
- Switching Energy :
- 1.3mJ (on), 260μJ (off)
- Pbfree Code :
- yes
- Max Collector Current :
- 80A
- Turn On Delay Time :
- 12 ns
- Height :
- 20.6mm
- Turn-Off Delay Time :
- 92 ns
- Turn Off Time-Nom (toff) :
- 132 ns
- Current - Collector Pulsed (Icm) :
- 120A
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Input Type :
- Standard
- Transistor Element Material :
- SILICON
- Length :
- 15.6mm
- Case Connection :
- COLLECTOR
- Fall Time-Max (tf) :
- 17ns
- Collector Emitter Voltage (VCEO) :
- 600V
- Package / Case :
- TO-247-3
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 1.9V
- Weight :
- 6.39g
- Reverse Recovery Time :
- 90ns
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 40A
- Gate-Emitter Voltage-Max :
- 20V
- Power Dissipation :
- 349W
- Transistor Application :
- POWER CONTROL
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Packaging :
- Tube
- Width :
- 4.7mm
- ECCN Code :
- EAR99
- Gate-Emitter Thr Voltage-Max :
- 6V
- Turn On Time :
- 37 ns
- Published :
- 2013
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~175°C TJ
- JEDEC-95 Code :
- TO-247AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time-Max :
- 28ns
- Element Configuration :
- Single
- Base Part Number :
- FGH40N60
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- Max Power Dissipation :
- 349W
- Td (on/off) @ 25°C :
- 12ns/92ns
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Datasheets
- FGH40N60SMDF

FGH40N60SMDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40N60SMDF IGBT Description
The FGH40N60SMDF IGBT employs ground-breaking field-stop IGBT technology, and ON Semiconductor's new series of field-stop 2nd generation IGBTs provides the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where minimal conduction and switching losses are crucial. It has high input impedance to avoid the loading effect to a large extent.
FGH40N60SMDF IGBT Features
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
High current handling capability
RoHS compliant
Tightened parameter distribution
High input impedance
Maximum junction temperature: =175 °C
Fast switching: EOFF: 6.5uJ/A
Positive temperature co-efficient for an easy parallel operating
FGH40N60SMDF IGBT Applications
Consumer Appliances
NTC Thermistors
Automotive Applications
Cable Load
Single-Ended Quasi-Resonant Topology
Class-E Power Amplifiers
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