FGH40N60SMDF
- Mfr.Part #
- FGH40N60SMDF
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 600V 80A TO247-3
- Stock
- 25,301
- In Stock :
- 25,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-247AB
- Collector Emitter Saturation Voltage :
- 1.9V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Gate Charge :
- 119nC
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- Transistor Application :
- POWER CONTROL
- Length :
- 15.6mm
- Td (on/off) @ 25°C :
- 12ns/92ns
- Reverse Recovery Time :
- 90ns
- Case Connection :
- COLLECTOR
- Published :
- 2013
- Pbfree Code :
- yes
- Fall Time-Max (tf) :
- 17ns
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 600V
- Number of Pins :
- 3
- Turn On Delay Time :
- 12 ns
- Turn-Off Delay Time :
- 92 ns
- Max Collector Current :
- 80A
- Number of Elements :
- 1
- Base Part Number :
- FGH40N60
- Power Dissipation :
- 349W
- Width :
- 4.7mm
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~175°C TJ
- Gate-Emitter Thr Voltage-Max :
- 6V
- Height :
- 20.6mm
- Weight :
- 6.39g
- Turn On Time :
- 37 ns
- Max Power Dissipation :
- 349W
- Collector Emitter Breakdown Voltage :
- 600V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Gate-Emitter Voltage-Max :
- 20V
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- IGBT Type :
- Field Stop
- Number of Terminations :
- 3
- Turn Off Time-Nom (toff) :
- 132 ns
- Current - Collector Pulsed (Icm) :
- 120A
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- HTS Code :
- 8541.29.00.95
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 40A
- Rise Time-Max :
- 28ns
- Switching Energy :
- 1.3mJ (on), 260μJ (off)
- JESD-609 Code :
- e3
- Datasheets
- FGH40N60SMDF

FGH40N60SMDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40N60SMDF IGBT Description
The FGH40N60SMDF IGBT employs ground-breaking field-stop IGBT technology, and ON Semiconductor's new series of field-stop 2nd generation IGBTs provides the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where minimal conduction and switching losses are crucial. It has high input impedance to avoid the loading effect to a large extent.
FGH40N60SMDF IGBT Features
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
High current handling capability
RoHS compliant
Tightened parameter distribution
High input impedance
Maximum junction temperature: =175 °C
Fast switching: EOFF: 6.5uJ/A
Positive temperature co-efficient for an easy parallel operating
FGH40N60SMDF IGBT Applications
Consumer Appliances
NTC Thermistors
Automotive Applications
Cable Load
Single-Ended Quasi-Resonant Topology
Class-E Power Amplifiers
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