FGH40N60SMDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Field Stop

Gate Charge :

119nC

Polarity/Channel Type :

N-Channel

HTS Code :

8541.29.00.95

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

1.3mJ (on), 260μJ (off)

Pbfree Code :

yes

Max Collector Current :

80A

Turn On Delay Time :

12 ns

Height :

20.6mm

Turn-Off Delay Time :

92 ns

Turn Off Time-Nom (toff) :

132 ns

Current - Collector Pulsed (Icm) :

120A

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Lead Free :

Lead Free

Input Type :

Standard

Transistor Element Material :

SILICON

Length :

15.6mm

Case Connection :

COLLECTOR

Fall Time-Max (tf) :

17ns

Collector Emitter Voltage (VCEO) :

600V

Package / Case :

TO-247-3

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

1.9V

Weight :

6.39g

Reverse Recovery Time :

90ns

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Gate-Emitter Voltage-Max :

20V

Power Dissipation :

349W

Transistor Application :

POWER CONTROL

Number of Pins :

3

Mounting Type :

Through Hole

Number of Terminations :

3

Packaging :

Tube

Width :

4.7mm

ECCN Code :

EAR99

Gate-Emitter Thr Voltage-Max :

6V

Turn On Time :

37 ns

Published :

2013

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-247AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time-Max :

28ns

Element Configuration :

Single

Base Part Number :

FGH40N60

Test Condition :

400V, 40A, 6 Ω, 15V

Max Power Dissipation :

349W

Td (on/off) @ 25°C :

12ns/92ns

Number of Elements :

1

Radiation Hardening :

No