FGH40N60SMDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Height :

20.6mm

Fall Time-Max (tf) :

17ns

Factory Lead Time :

4 Weeks

Mounting Type :

Through Hole

Mount :

Through Hole

Rise Time-Max :

28ns

Turn-Off Delay Time :

92 ns

Number of Terminations :

3

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

HTS Code :

8541.29.00.95

Gate-Emitter Voltage-Max :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Turn On Time :

37 ns

Turn On Delay Time :

12 ns

Number of Elements :

1

Packaging :

Tube

Width :

4.7mm

Base Part Number :

FGH40N60

Power Dissipation :

349W

Operating Temperature :

-55°C~175°C TJ

Length :

15.6mm

Published :

2013

Max Power Dissipation :

349W

Collector Emitter Breakdown Voltage :

600V

Weight :

6.39g

Pbfree Code :

yes

Turn Off Time-Nom (toff) :

132 ns

Case Connection :

COLLECTOR

Switching Energy :

1.3mJ (on), 260μJ (off)

IGBT Type :

Field Stop

Input Type :

Standard

Transistor Application :

POWER CONTROL

Number of Pins :

3

Collector Emitter Saturation Voltage :

1.9V

Max Collector Current :

80A

ECCN Code :

EAR99

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

600V

Test Condition :

400V, 40A, 6 Ω, 15V

Reverse Recovery Time :

90ns

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Gate-Emitter Thr Voltage-Max :

6V

Current - Collector Pulsed (Icm) :

120A

Td (on/off) @ 25°C :

12ns/92ns

JEDEC-95 Code :

TO-247AB

JESD-609 Code :

e3

Gate Charge :

119nC