FGH40N60SMDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Length :

15.6mm

Weight :

6.39g

Gate Charge :

119nC

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Width :

4.7mm

Reverse Recovery Time :

90ns

Current - Collector Pulsed (Icm) :

120A

Published :

2013

Packaging :

Tube

Transistor Application :

POWER CONTROL

Fall Time-Max (tf) :

17ns

Turn Off Time-Nom (toff) :

132 ns

Rise Time-Max :

28ns

Number of Pins :

3

Number of Elements :

1

Mount :

Through Hole

Base Part Number :

FGH40N60

Radiation Hardening :

No

Power Dissipation :

349W

JESD-609 Code :

e3

Mounting Type :

Through Hole

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Input Type :

Standard

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

92 ns

Max Power Dissipation :

349W

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 40A

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Turn On Delay Time :

12 ns

Max Collector Current :

80A

Switching Energy :

1.3mJ (on), 260μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Terminations :

3

IGBT Type :

Field Stop

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

JEDEC-95 Code :

TO-247AB

Pbfree Code :

yes

Height :

20.6mm

Test Condition :

400V, 40A, 6 Ω, 15V

Collector Emitter Voltage (VCEO) :

600V

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

1.9V

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Turn On Time :

37 ns

Td (on/off) @ 25°C :

12ns/92ns

Gate-Emitter Thr Voltage-Max :

6V

HTS Code :

8541.29.00.95