FGH40N60SMDF
- Mfr.Part #
- FGH40N60SMDF
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 600V 80A TO247-3
- Stock
- 25,301
- In Stock :
- 25,301
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Radiation Hardening :
- No
- Height :
- 20.6mm
- Fall Time-Max (tf) :
- 17ns
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Rise Time-Max :
- 28ns
- Turn-Off Delay Time :
- 92 ns
- Number of Terminations :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 40A
- Package / Case :
- TO-247-3
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.95
- Gate-Emitter Voltage-Max :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Polarity/Channel Type :
- N-Channel
- Turn On Time :
- 37 ns
- Turn On Delay Time :
- 12 ns
- Number of Elements :
- 1
- Packaging :
- Tube
- Width :
- 4.7mm
- Base Part Number :
- FGH40N60
- Power Dissipation :
- 349W
- Operating Temperature :
- -55°C~175°C TJ
- Length :
- 15.6mm
- Published :
- 2013
- Max Power Dissipation :
- 349W
- Collector Emitter Breakdown Voltage :
- 600V
- Weight :
- 6.39g
- Pbfree Code :
- yes
- Turn Off Time-Nom (toff) :
- 132 ns
- Case Connection :
- COLLECTOR
- Switching Energy :
- 1.3mJ (on), 260μJ (off)
- IGBT Type :
- Field Stop
- Input Type :
- Standard
- Transistor Application :
- POWER CONTROL
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 1.9V
- Max Collector Current :
- 80A
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 600V
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- Reverse Recovery Time :
- 90ns
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Gate-Emitter Thr Voltage-Max :
- 6V
- Current - Collector Pulsed (Icm) :
- 120A
- Td (on/off) @ 25°C :
- 12ns/92ns
- JEDEC-95 Code :
- TO-247AB
- JESD-609 Code :
- e3
- Gate Charge :
- 119nC
- Datasheets
- FGH40N60SMDF

FGH40N60SMDF datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGH40N60SMDF IGBT Description
The FGH40N60SMDF IGBT employs ground-breaking field-stop IGBT technology, and ON Semiconductor's new series of field-stop 2nd generation IGBTs provides the best performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications where minimal conduction and switching losses are crucial. It has high input impedance to avoid the loading effect to a large extent.
FGH40N60SMDF IGBT Features
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
High current handling capability
RoHS compliant
Tightened parameter distribution
High input impedance
Maximum junction temperature: =175 °C
Fast switching: EOFF: 6.5uJ/A
Positive temperature co-efficient for an easy parallel operating
FGH40N60SMDF IGBT Applications
Consumer Appliances
NTC Thermistors
Automotive Applications
Cable Load
Single-Ended Quasi-Resonant Topology
Class-E Power Amplifiers
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