FGH40N60SFTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

600V

Input Type :

Standard

Base Part Number :

FGH40N60

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Number of Elements :

1

JESD-609 Code :

e3

Mount :

Through Hole

Length :

15.6mm

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 40A

Pbfree Code :

yes

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

25ns/115ns

Fall Time-Max (tf) :

54ns

Turn On Time :

67 ns

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Power - Max :

290W

Width :

4.7mm

Factory Lead Time :

9 Weeks

Terminal Finish :

Tin (Sn)

Switching Energy :

1.13mJ (on), 310μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Pins :

3

Current - Collector Pulsed (Icm) :

120A

Turn Off Time-Nom (toff) :

150 ns

Collector Emitter Saturation Voltage :

2.3V

Height :

20.6mm

Radiation Hardening :

No

Gate-Emitter Thr Voltage-Max :

6.5V

Case Connection :

COLLECTOR

IGBT Type :

Field Stop

JEDEC-95 Code :

TO-247AB

Max Breakdown Voltage :

1.2kV

Published :

2011

Weight :

6.39g

Package / Case :

TO-247-3

Test Condition :

400V, 40A, 10 Ω, 15V

REACH SVHC :

No SVHC

Gate-Emitter Voltage-Max :

20V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Max Power Dissipation :

290W

Gate Charge :

120nC

Max Collector Current :

80A

ECCN Code :

EAR99

Additional Feature :

LOW CONDUCTION LOSS