SI4948BEY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~175°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

15ns

Resistance :

120mOhm

Number of Elements :

2

Transistor Element Material :

SILICON

Number of Pins :

8

Weight :

186.993455mg

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Width :

4mm

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

50 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Channels :

2

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Base Part Number :

SI4948

Threshold Voltage :

-3V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

120m Ω @ 3.1A, 10V

Fall Time (Typ) :

15 ns

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

8

ECCN Code :

EAR99

Radiation Hardening :

No

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-3.1A

Length :

5mm

Current - Continuous Drain (Id) @ 25°C :

2.4A

Nominal Vgs :

-3 V

Gate to Source Voltage (Vgs) :

20V

Published :

2009

Height :

1.55mm

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

DS Breakdown Voltage-Min :

60V

Drain to Source Voltage (Vdss) :

60V

FET Type :

2 P-Channel (Dual)

Factory Lead Time :

14 Weeks

Terminal Form :

Gull wing

Max Power Dissipation :

1.4W

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.4W