SI4913DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

15m Ω @ 9.4A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Number of Terminations :

8

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Element Configuration :

Dual

Max Power Dissipation :

1.1W

Drain to Source Breakdown Voltage :

-20V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 500µA

Drain-source On Resistance-Max :

0.015Ohm

Pin Count :

8

Base Part Number :

SI4913

Series :

TrenchFET®

Fall Time (Typ) :

160 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

-1V

REACH SVHC :

Unknown

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Rise Time :

42ns

Drain Current-Max (Abs) (ID) :

7.1A

FET Feature :

Logic Level Gate

Terminal Finish :

PURE MATTE TIN

Transistor Element Material :

SILICON

Mount :

Surface Mount

Published :

2015

Power Dissipation :

1.1W

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

32 ns

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

9.4A

Gate to Source Voltage (Vgs) :

8V

Turn-Off Delay Time :

350 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

JESD-609 Code :

e3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

7.1A