SI4900DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn-Off Delay Time :

20 ns

FET Type :

2 N-Channel (Dual)

Fall Time (Typ) :

10 ns

Contact Plating :

Tin

Power - Max :

3.1W

Element Configuration :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2W

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Series :

TrenchFET®

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

186.993455mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Published :

2011

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Height :

1.55mm

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

5.3A

Length :

5mm

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.3A, 10V

Mount :

Surface Mount

Resistance :

58mOhm

Width :

4mm

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Number of Terminations :

8

Transistor Application :

SWITCHING

Pin Count :

8

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Base Part Number :

SI4900

Rise Time :

15ns