SI4914BDY-T1-GE3
- Mfr.Part #
- SI4914BDY-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 8.4A 8-SOIC
- Stock
- 21,811
- In Stock :
- 21,811
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Weight :
- 506.605978mg
- Mounting Type :
- Surface Mount
- Drain to Source Resistance :
- 15.5MOhm
- FET Feature :
- Standard
- Factory Lead Time :
- 27 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 8.4A 8A
- Number of Elements :
- 2
- Element Configuration :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Supplier Device Package :
- 8-SO
- Series :
- LITTLE FOOT®
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 2.7V @ 250μA
- Drain to Source Voltage (Vdss) :
- 30V
- Power - Max :
- 2.7W 3.1W
- Turn-Off Delay Time :
- 16 ns
- Published :
- 2016
- Max Operating Temperature :
- 150°C
- Max Power Dissipation :
- 3.1W
- Number of Pins :
- 8
- Min Operating Temperature :
- -55°C
- Number of Channels :
- 2
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 21mOhm @ 8A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5nC @ 4.5V
- Continuous Drain Current (ID) :
- 8A
- Base Part Number :
- SI4914
- FET Type :
- 2 N-Channel (Half Bridge)
- Turn On Delay Time :
- 10 ns
- Rise Time :
- 9ns
- Packaging :
- Tape and Reel (TR)
- Rds On Max :
- 21 mΩ
- Fall Time (Typ) :
- 8 ns
- Datasheets
- SI4914BDY-T1-GE3

SI4914BDY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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