SI4908DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

95ns

Current - Continuous Drain (Id) @ 25°C :

5A

Base Part Number :

SI4908

Input Capacitance :

355pF

Max Power Dissipation :

1.85W

Drain to Source Breakdown Voltage :

40V

Mount :

Surface Mount

Power - Max :

2.75W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Published :

2016

Drain to Source Resistance :

60mOhm

FET Feature :

Standard

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

74 ns

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

60mOhm @ 4.1A, 10V

Number of Channels :

2

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Fall Time (Typ) :

95 ns

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

16V

Weight :

186.993455mg

Drain to Source Voltage (Vdss) :

40V

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

355pF @ 20V

Height :

1.5mm

Turn-Off Delay Time :

31 ns

Min Operating Temperature :

-55°C

Width :

4mm

Number of Elements :

2

Mounting Type :

Surface Mount

Power Dissipation :

1.85W

Series :

TrenchFET®

Rds On Max :

60 mΩ

Continuous Drain Current (ID) :

5A

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Length :

5mm

Supplier Device Package :

8-SO

Max Operating Temperature :

150°C