SI4908DY-T1-E3
- Mfr.Part #
- SI4908DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 40V 5A 8-SOIC
- Stock
- 18,028
- In Stock :
- 18,028
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate to Source Voltage (Vgs) :
- 16V
- Drain to Source Breakdown Voltage :
- 40V
- Input Capacitance :
- 355pF
- Packaging :
- Tape and Reel (TR)
- Weight :
- 186.993455mg
- Power - Max :
- 2.75W
- Base Part Number :
- SI4908
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 5A
- Number of Channels :
- 2
- Series :
- TrenchFET®
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Surface Mount
- Rds On Max :
- 60 mΩ
- Turn-Off Delay Time :
- 31 ns
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation :
- 1.85W
- Max Power Dissipation :
- 1.85W
- Input Capacitance (Ciss) (Max) @ Vds :
- 355pF @ 20V
- Supplier Device Package :
- 8-SO
- Number of Pins :
- 8
- FET Feature :
- Standard
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Dual
- Length :
- 5mm
- Width :
- 4mm
- Number of Elements :
- 2
- Published :
- 2016
- FET Type :
- 2 N-Channel (Dual)
- Rise Time :
- 95ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A
- Turn On Delay Time :
- 74 ns
- Height :
- 1.5mm
- Drain to Source Resistance :
- 60mOhm
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 95 ns
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 4.1A, 10V
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Datasheets
- SI4908DY-T1-E3

SI4908DY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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