SI4910DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

2V

Base Part Number :

SI4910

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Fall Time (Typ) :

5 ns

Element Configuration :

Dual

Feedback Cap-Max (Crss) :

65 pF

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

7.6A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

855pF @ 20V

Gate to Source Voltage (Vgs) :

16V

Transistor Element Material :

SILICON

Pin Count :

8

Transistor Application :

SWITCHING

Rise Time :

60ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Standard

ECCN Code :

EAR99

Max Power Dissipation :

2W

Continuous Drain Current (ID) :

6A

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Power - Max :

3.1W

Terminal Finish :

PURE MATTE TIN

Turn-Off Delay Time :

22 ns

Radiation Hardening :

No

Pbfree Code :

yes

REACH SVHC :

No SVHC

Power Dissipation :

2W

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Rds On (Max) @ Id, Vgs :

27m Ω @ 6A, 10V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

40V