SI4900DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

JESD-609 Code :

e3

Element Configuration :

Dual

Power Dissipation :

2W

ECCN Code :

EAR99

Width :

4mm

Transistor Element Material :

SILICON

Base Part Number :

SI4900

Published :

2009

Height :

1.55mm

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

DS Breakdown Voltage-Min :

60V

Number of Elements :

2

Power - Max :

3.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

65ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

TrenchFET®

Mounting Type :

Surface Mount

Weight :

186.993455mg

Threshold Voltage :

2.5V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Turn-Off Delay Time :

15 ns

Pin Count :

8

FET Feature :

Logic Level Gate

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

PURE MATTE TIN

REACH SVHC :

Unknown

Number of Terminations :

8

Turn On Delay Time :

15 ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

5.3A

Length :

5mm

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

58m Ω @ 4.3A, 10V

Fall Time (Typ) :

10 ns

Max Power Dissipation :

2W