SI4913DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

8V

Drain to Source Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7.1A

Element Configuration :

Dual

Number of Pins :

8

Pin Count :

8

Max Power Dissipation :

1.1W

FET Type :

2 P-Channel (Dual)

Fall Time (Typ) :

42 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

42ns

Mounting Type :

Surface Mount

Base Part Number :

SI4913

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

15m Ω @ 9.4A, 4.5V

Nominal Vgs :

-1 V

Vgs(th) (Max) @ Id :

1V @ 500µA

REACH SVHC :

Unknown

Mount :

Surface Mount

Radiation Hardening :

No

Number of Elements :

2

Published :

2009

Resistance :

15mOhm

Power Dissipation :

1.1W

Turn-Off Delay Time :

350 ns

Transistor Application :

SWITCHING

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

7.1A

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 4.5V

Terminal Form :

Gull wing

Turn On Delay Time :

32 ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

9.4A

Threshold Voltage :

-1V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Lead Free :

Lead Free

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON