SI4909DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

9ns

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Weight :

506.605978mg

Rds On Max :

27 mΩ

FET Type :

2 P-Channel (Dual)

Max Junction Temperature (Tj) :

150°C

Number of Elements :

2

FET Feature :

Logic Level Gate

Supplier Device Package :

8-SO

Drain to Source Resistance :

21mOhm

Current - Continuous Drain (Id) @ 25°C :

8A

Mount :

Surface Mount

Number of Pins :

8

Threshold Voltage :

-1.2V

Turn On Delay Time :

10 ns

Power Dissipation :

2W

Height :

1.75mm

Max Power Dissipation :

3.2W

Min Operating Temperature :

-55°C

Number of Channels :

2

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Drain to Source Breakdown Voltage :

-40V

Factory Lead Time :

14 Weeks

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

40V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 20V

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

50 ns

Max Operating Temperature :

150°C

Power - Max :

3.2W

Continuous Drain Current (ID) :

-8A

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

27mOhm @ 8A, 10V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

13 ns

Published :

2014

Input Capacitance :

2nF

Gate to Source Voltage (Vgs) :

20V