SI4943CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

8A

Weight :

186.993455mg

Number of Pins :

8

Base Part Number :

SI4943

Radiation Hardening :

No

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Length :

5mm

Power - Max :

3.1W

Width :

4mm

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

19.2m Ω @ 8.3A, 10V

Continuous Drain Current (ID) :

-8A

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

3.1W

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation :

2W

Number of Channels :

2

Height :

1.5mm

Factory Lead Time :

14 Weeks

Series :

TrenchFET®

Turn-Off Delay Time :

29 ns

Input Capacitance (Ciss) (Max) @ Vds :

1945pF @ 10V

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

FET Type :

2 P-Channel (Dual)

Resistance :

19.2mOhm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8A

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

50 ns

ECCN Code :

EAR99

Rise Time :

71ns

Published :

2016

Operating Temperature :

-50°C~150°C TJ

Terminal Finish :

PURE MATTE TIN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Drain to Source Breakdown Voltage :

-20V

Fall Time (Typ) :

15 ns

Number of Elements :

2

Element Configuration :

Dual