SI4943BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Nominal Vgs :

-1 V

FET Type :

2 P-Channel (Dual)

Power Dissipation :

1.1W

Time@Peak Reflow Temperature-Max (s) :

40

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

6.3A

Factory Lead Time :

14 Weeks

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Turn-Off Delay Time :

94 ns

Operating Mode :

ENHANCEMENT MODE

Height :

1.55mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Published :

2009

Terminal Form :

Gull wing

Number of Elements :

2

Rise Time :

10ns

Base Part Number :

SI4943

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

19mOhm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

JESD-609 Code :

e3

Number of Pins :

8

Fall Time (Typ) :

10 ns

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

4mm

Turn On Delay Time :

11 ns

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

19m Ω @ 8.4A, 10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Length :

5mm

REACH SVHC :

Unknown

Element Configuration :

Dual

Max Power Dissipation :

1.1W

RoHS Status :

ROHS3 Compliant

Weight :

186.993455mg

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

6.3A

Mounting Type :

Surface Mount

Number of Channels :

2

Continuous Drain Current (ID) :

-8.4A

Pin Count :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount