SI4936BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Weight :

506.605978mg

Published :

2009

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Terminal Form :

Gull wing

Threshold Voltage :

3V

Number of Pins :

8

Height :

1.55mm

Width :

4mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

25 ns

Pulsed Drain Current-Max (IDM) :

30A

Termination :

SMD/SMT

Base Part Number :

SI4936

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Number of Channels :

2

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.9A, 10V

Pin Count :

8

Power - Max :

2.8W

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Power Dissipation :

2W

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

5 ns

JESD-609 Code :

e3

Max Power Dissipation :

2W

Dual Supply Voltage :

30V

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 15V

Pbfree Code :

yes

Turn-Off Delay Time :

12 ns

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Length :

5mm

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

ECCN Code :

EAR99

Lead Free :

Lead Free

Resistance :

35mOhm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

6.9A

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

3 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Rise Time :

25ns

Number of Elements :

2

Terminal Finish :

Matte Tin (Sn)