SI4936BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

25 ns

Continuous Drain Current (ID) :

6.9A

Transistor Element Material :

SILICON

Number of Pins :

8

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

506.605978mg

Mount :

Surface Mount

Max Power Dissipation :

2W

Nominal Vgs :

3 V

Vgs(th) (Max) @ Id :

3V @ 250µA

Pulsed Drain Current-Max (IDM) :

30A

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Channels :

2

Rise Time :

25ns

Dual Supply Voltage :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 15V

Pin Count :

8

Height :

1.55mm

Length :

5mm

JESD-609 Code :

e3

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.9A, 10V

Base Part Number :

SI4936

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

FET Type :

2 N-Channel (Dual)

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Series :

TrenchFET®

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Termination :

SMD/SMT

Number of Terminations :

8

Threshold Voltage :

3V

Turn-Off Delay Time :

12 ns

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

35mOhm

Transistor Application :

SWITCHING

Width :

4mm

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

REACH SVHC :

No SVHC

Power - Max :

2.8W

Number of Elements :

2