SI4932DY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

8A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Height :

1.55mm

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 15V

Series :

TrenchFET®

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Contact Plating :

Tin

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Continuous Drain Current (ID) :

8A

Power Dissipation :

2W

Resistance :

15mOhm

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Terminations :

8

Terminal Form :

Gull wing

Turn On Delay Time :

21 ns

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Width :

4mm

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Turn-Off Delay Time :

26 ns

Rise Time :

10ns

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Rds On (Max) @ Id, Vgs :

15m Ω @ 7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Weight :

186.993455mg

Fall Time (Typ) :

8 ns

Lead Free :

Lead Free

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

14 Weeks

Pulsed Drain Current-Max (IDM) :

30A

Max Power Dissipation :

3.2W

Transistor Application :

SWITCHING

Length :

5mm

Drain to Source Voltage (Vdss) :

30V