SI4925BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

5.3A

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.025Ohm

DS Breakdown Voltage-Min :

30V

HTS Code :

8541.29.00.95

Power Dissipation-Max (Abs) :

2W

Power - Max :

1.1W

Current - Continuous Drain (Id) @ 25°C :

5.3A

Peak Reflow Temperature (Cel) :

260

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Number of Terminations :

8

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pbfree Code :

yes

FET Type :

2 P-Channel (Dual)

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI4925

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

25m Ω @ 7.1A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

30

Reach Compliance Code :

Unknown

Pin Count :

8

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)