SI4916DY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

18mOhm

Pulsed Drain Current-Max (IDM) :

40A

Lead Free :

Lead Free

Continuous Drain Current (ID) :

7.5A

Terminal Form :

Flat

Turn-Off Delay Time :

27 ns

Power - Max :

3.3W 3.5W

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Mounting Type :

Surface Mount

Number of Channels :

2

Weight :

186.993455mg

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

18m Ω @ 10A, 10V

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.55mm

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

15 Weeks

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

13 ns

FET Type :

2 N-Channel (Half Bridge)

Turn On Delay Time :

9 ns

Rise Time :

13ns

Width :

4mm

Radiation Hardening :

No

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

10.5A

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Max Power Dissipation :

3.5W

Published :

2015

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Pin Count :

8

Base Part Number :

SI4916

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Number of Terminations :

8

JESD-609 Code :

e3

Series :

LITTLE FOOT®

Current - Continuous Drain (Id) @ 25°C :

10A 10.5A

Vgs(th) (Max) @ Id :

3V @ 250µA