SI1563EDH-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Fall Time (Typ) :

850 ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Resistance :

490mOhm

Lead Free :

Lead Free

Voltage :

20V

Threshold Voltage :

1V

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Max Power Dissipation :

570mW

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

570mW

Terminal Finish :

MATTE TIN

Drain to Source Breakdown Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

1.13A 880mA

Terminal Form :

Gull wing

Current :

1A

Nominal Vgs :

450 mV

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 4.5V

Rise Time :

480ns

Package / Case :

6-TSSOP, SC-88, SOT-363

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1V @ 100µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Pin Count :

6

Number of Elements :

2

Continuous Drain Current (ID) :

1.13A

Number of Terminations :

6

Additional Feature :

ESD Protection

Series :

TrenchFET®

Turn-Off Delay Time :

840 ns

FET Type :

N and P-Channel

Base Part Number :

SI1563

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

280m Ω @ 1.13A, 4.5V

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260