SI1553DL-T1-E3
- Mfr.Part #
- SI1553DL-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N/P-CH 20V SC70-6
- Stock
- 4,661
- In Stock :
- 4,661
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 385m Ω @ 660mA, 4.5V
- Radiation Hardening :
- No
- REACH SVHC :
- Unknown
- Element Configuration :
- Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 2
- FET Feature :
- Logic Level Gate
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 12V
- Max Power Dissipation :
- 270mW
- FET Type :
- N and P-Channel
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- SI1553
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 660mA 410mA
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA (Min)
- Terminal Form :
- Gull wing
- Number of Pins :
- 6
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 20V
- Turn-Off Delay Time :
- 8.5 ns
- Nominal Vgs :
- 600 mV
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Resistance :
- 995mOhm
- Rise Time :
- 20ns
- Continuous Drain Current (ID) :
- 660mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gate Charge (Qg) (Max) @ Vgs :
- 1.2nC @ 4.5V
- Series :
- TrenchFET®
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 20 ns
- Power Dissipation :
- 300mW
- Datasheets
- SI1553DL-T1-E3
SI1553DL-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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