SI1539CDL-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

19ns

Number of Elements :

2

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

700mA 500mA

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Factory Lead Time :

14 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

10 ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

28pF @ 15V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

388m Ω @ 600mA, 10V

Number of Pins :

6

Continuous Drain Current (ID) :

700mA

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Turn-Off Delay Time :

4 ns

Weight :

28.009329mg

Pin Count :

6

Number of Terminations :

6

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

0.7A

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

32 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

290mW

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Series :

TrenchFET®

Max Power Dissipation :

340mW

Operating Mode :

ENHANCEMENT MODE

Published :

2015

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Package / Case :

6-TSSOP, SC-88, SOT-363

Height :

1.1mm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

FET Type :

N and P-Channel

Threshold Voltage :

1.2V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.388Ohm